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Toward high-mobility organic field-effect transistors: Control of molecular packing and large-area fabrication of single-crystal-based devices

Published online by Cambridge University Press:  14 January 2013

Hanying Li
Affiliation:
State Key Laboratory of Silicon Materials and Department of Polymer Science and Engineering, Zhejiang University, China; hanying_li@zju.edu.cn
Gaurav Giri
Affiliation:
Department of Chemical Engineering, Stanford University; ggiri@stanford.edu
Jeffrey B.-H. Tok
Affiliation:
Department of Chemical Engineering, Stanford University; jbtok@stanford.edu
Zhenan Bao
Affiliation:
Department of Chemical Engineering, Stanford University; zbao@stanford.edu

Abstract

High-mobility organic field-effect transistors (OFETs) are the basic units for a variety of high-performance electronic applications. Here, we review recent progress in controlling molecular packing and crystal growth in high-mobility, small molecular organic FETs. Strategies to tune molecular packing of organic semiconductors and their impact on charge transport are described. Methods for the controlled growth of single-crystal organic semiconductors required for large-area device construction are reviewed. Furthermore, the advantages, limitations, and potential of these methods are also discussed.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2013
Figure 0

Figure 1. Using chemical modifications to tune molecular packing. (a) Chemical structure of 6,13-substituted pentacene. The 6 and 13 positions (arrows) can be modified with a variety of substituents, R, such as those listed here. (b) The herringbone packing motif in a thin film of pentacene.47 (c) Single-crystal packing structure of R = SiMe3 pentacene derivative, showing 1D slipped-stack packing.42 (d) Single-crystal structure of R = Sii Pr3 pentacene derivative, showing 2D brick-wall packing.48 In (b) and (d), the rectangle marks the view of the unit cell looking down from the c-axis, with the red and green lines representing the a- and b-axes. The atoms present in the organic semiconductors are represented as spheres (white = hydrogen, black = carbon, yellow = sulfur).

Figure 1

Figure 2. Different packing structures in pentacene: F16CuPc blends with a ratio of (a) 1:1, (b) 2:1, and (c) 3:1. The lattice structure changes significantly.70 For an increasing ratio, the crystal unit cell accommodates the increasing density of pentacene molecules. The molecules were assembled in rows (arrows) in a similar manner to pentacene assembly. Pentacene at the trimer center and surrounding four F16CuPc were labeled c, t, b, l, and r, respectively. Adapted from Reference 70 with permission. © 2011 American Chemical Society.

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Figure 3. Kagome lattice of C70 on TiOPc.72 Left: a TiOPc monolayer on a metal surface. Right: deposition of C70. Green signifies the TiOPc template layer, red signifies the first layer of deposited C70, and yellow signifies the second layer of C70 that deposits in a Kagome style lattice. Adapted from Reference 72 with permission. © 2011 American Chemical Society.

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Figure 4. Tuning the crystal packing by solution shearing. (a) Schematic of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) solution shearing on phenyl-trichlorosilane (PTS) treated silicon oxide/silicon substrates. (b) Lattice strain in TIPS-pentacene at different shearing speeds. (c) Thin-film molecular packing structure of evaporated TIPS-pentacene. (d) Thin-film molecular packing structure of solution sheared and lattice strained TIPS-pentacene. The green and yellow spheres indicate the TIPS side group. The blue arrow represents the fast charge transport direction. T1 and T2 denote the unique molecular pairs. Adapted from Reference 75 with permission. © 2011 Nature Publishing Group.

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Figure 5. Patterning nucleation sites. (a) Molecular modeling of (001)-oriented anthracene crystals on a terphenylthiol (-3P) self-assembled monolayer (SAM). (b) Optical micrographs of the patterned anthracene crystals. Crystal nucleation occurs from the -3P SAM regions (red arrow) and not from the HS(CH2)11CH3 SAM regions (white arrow). The patterned domains are 100 × 100 μm2. (c) A 3D atomic force microscopy image (20 × 20 μm2) of an OTS layer with polydimethylsiloxane regions (5 × 5 μm2) on a SiO2 substrate. (d) An optical micrograph of patterned C60 single-crystal arrays. The white dashed square indicates the size and location of one of the octadecyltriethoxysilane-stamped domains. Adapted from References 82 (© 2005 American Chemical Society) and 83 (© 2006 Nature Publishing Group) with permission.

Figure 5

Figure 6. (a) Schematic of the inject printing process for organic semiconductor (OSC) crystals. Antisolvent ink is inkjet-printed (step 1), and then OSC solution ink is dropped on top to form intermixed droplets confined to a predefined area (step 2). OSC crystals nucleate at the liquid-air interface (step 3), before the solvents completely evaporate (step 4). (b) Micrographs of a 20 × 7 array of inkjet-printed C8-BTBT single crystal. (c) Crossed Nicols polarized micrographs of a crystal with the entire crystal extinguishing the light simultaneously, thus showing single crystallinity. Adapted from Reference 24 with permission. © 2011 Nature Publishing Group. Note: (C8-BTBT), 2,7-dioctyl[1]benzothieno[3,2-b][1] benzothiophene.

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Figure 7. (a–b) Schematic of the organic semiconductor (OSC) solution patterning droplet process. A stamp is designed with gaps (a) or channels (b) to confine droplets of OSC solution. (c–d) Micrographs of a 4 × 4 array of OSC crystals (green) patterned using the stamp. Adapted from References 19 (© 2011 Wiley) and 90 (© 2012 Elsevier) with permission. Note: C10-DNTT, 2,9-alkyl-dinaphtho[2,3-b:2,‘3’-f]thieno[3,2-b]thiophene.

Figure 7

Figure 8. (a–e) Schematic illustration of the filtration and transfer process. (a) A microwire (MW) dispersion is filtered by vacuum through a polydimethylsiloxane (PDMS) mask placed on a porous anodized aluminum oxide (AAO) membrane. (b) After vacuum filtration, MWs are aligned along PDMS mask channels. (c) Removal of the AAO membrane. (d) Transfer of the MWs onto field-effect transistor substrates (SiO2/Si wafer covered by n-octadecyl triethoxysilane [OTS]). (e) Removal of the AAO and PDMS masks and transfer of the MWs onto the wafer. (f) Micrographs of the obtained aligned MWs. Adapted from Reference 15 with permission. © 2009 National Academy of Sciences. Note: BPE-PTCDI, N,N’-bis(2-phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide.

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