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Ultra-compact high-performance filters based on TM dual-mode dielectric-loaded cavities

Published online by Cambridge University Press:  03 December 2013

Luca Pelliccia*
Affiliation:
RF Microtech Srl, Via P. Mascagni 11, Perugia 06132, Italy. Phone: +39 075 52 71 436
Fabrizio Cacciamani
Affiliation:
Electronic and Information Engineering Department (DIEI), University of Perugia, Via G. Duranti 93, Perugia 06125, Italy
Cristiano Tomassoni
Affiliation:
Electronic and Information Engineering Department (DIEI), University of Perugia, Via G. Duranti 93, Perugia 06125, Italy
Roberto Sorrentino
Affiliation:
Electronic and Information Engineering Department (DIEI), University of Perugia, Via G. Duranti 93, Perugia 06125, Italy
*
Corresponding author: L. Pelliccia Email: pelliccia@rfmicrotech.com
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Abstract

Ultra-compact band-pass filters with Nth-order pseudoelliptic response are presented allowing dramatic volume and mass savings (up to about 90%) compared to conventional filters at the price of a modest Q-factor reduction. TM dual-mode cavities loaded with high-permittivity (εr > 30) ceramic cylinders are employed, while non-resonating modes are used to create N transmission zeros symmetrically or non-symmetrically located in the pass-band. A single cavity behaves as a generalized doublet generating two transmission poles and two transmission zeros and is used as a basic building block for N-pole and N-zero filters with symmetric or asymmetric response. To prove the effectiveness of the approach, a very compact fourth-order filter with 4.35 GHz center frequency, four transmission zeros has been designed, fabricated, and tested showing an unloaded Q close to 2000. It is finally shown that the filter response can be shifted in frequency by simply replacing the dielectric material with another having different εr, so that the same metal enclosure can be used to realize various filters operating at different frequency bands.

Information

Type
Research Paper
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 
Figure 0

Fig. 1. HFSS® model of a TM dual-mode rectangular cavity loaded with a dielectric cylinder.

Figure 1

Fig. 2. H-field distributions of resonant and non-resonating modes of the dielectric loaded cavity: (a) TM120 resonant mode, (b) TM210 resonant mode, and (c) TM110 non-resonating mode.

Figure 2

Fig. 3. Unloaded QS (a) and first higher-order resonant frequencies (b) of TM dual-mode loaded and unloaded cavities versus cavity length (l) @ f0 = 4 GHz (C-band), with σmetal = 6.1 × 107 S/m (silver), εr = 34, and tanδ = 10−5.

Figure 3

Table 1. Comparison among different resonator types at 4 GHz*.

Figure 4

Fig. 4. Transverse coupling scheme for second-order filtering functions with two transmission zeros (a); HFSS® model of the proposed architecture (b); geometrical parameters (c).

Figure 5

Fig. 5. H-field coupling between coax TEM and cavity modes: TEM–TM210 (a), TEM–TM120 (b), and TEM–TM110 (c)

Figure 6

Fig. 6. Positioning the two transmission zeros of the cavity of Fig. 4(b) by changing the angle (2θ) between feeding lines. Comparison between coupling matrix response and full-wave response. FBW (−3 dB) = 11.95%.

Figure 7

Fig. 7. H-field coupling between iris TE10 mode and cavity modes: TE10–TM210 (a), TE10–TM120 (b), and TE10–TM110 (c)

Figure 8

Fig. 8. Number and position of the transmission zeros by changing the angle (2θ) between feeding lines and the distance p of irises from the center. Comparison between coupling matrix response and full-wave response. FBW (−3 dB) = 4.5% (a), (b), FBW (−3 dB) = 3% (c).

Figure 9

Fig. 9. Cascade of TM dual-mode dielectric-loaded cavities. Connection through a thick iris (a) and its equivalent coupling scheme (b). Connection through a thin iris (c) and its equivalent coupling scheme (d).

Figure 10

Fig. 10. fourth-order filter response (S parameters): response from coupling matrix related to Fig. 9(b) (a); comparison among measurement (solid lines), HFSS® simulations (dotted lines) and response from coupling matrix related to Fig. 9(d) (b); in-band IL, comparison between measurement (solid line) and HFSS® simulations (dotted lines) (c); in-band Group-delay, comparison between measurement (solid line) and HFSS® simulations (dotted lines) (d).

Figure 11

Fig. 11. HFSS® model and two picture of the measured prototype of a fourth-order band-pass filter at 4.35 GHz [17].

Figure 12

Fig. 12. Alternative HFSS® design (right-hand side and dotted lines) to increase the upper stop-band in the case of a fourth-order filter at 4.35 GHz. Solid lines refer to the filter of Fig. 11.

Figure 13

Fig. 13. HFSS-simulated responses (S parameters) of the same filter enclosure model are shown in Fig. 11, using different cylinders of different dielectric permittivity (εr = 34: solid lines; εr = 50: dotted lines; and εr = 25: dashed lines).

Figure 14

Fig. 14. Measured responses (S parameters) of the same filter fabricated enclosure are shown in Fig. 11, using different cylinders of different dielectric permittivity (εr = 34: solid lines; εr = 45: dotted lines).