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Electrostatic self-assembly of nanoparticles into ordered nanowire arrays

Published online by Cambridge University Press:  24 January 2011

Jun Tang
Affiliation:
Department of Applied Physics, National Technical University of Athens, 15780 Zografou, Greece
E. Verrelli
Affiliation:
Department of Applied Physics, National Technical University of Athens, 15780 Zografou, Greece
K. Giannakopoulos
Affiliation:
Institute of Materials Science, NCSR Demokritos, 15310 Aghia Paraskevi, Greece
D. Tsoukalas*
Affiliation:
Department of Applied Physics, National Technical University of Athens, 15780 Zografou, Greece; and Institute of Microelectronics, NCSR Demokritos, 15310 Aghia Paraskevi, Greece
*
a)Address all correspondence to this author. e-mail: dtsouk@central.ntua.gr

Abstract

A novel nanoparticle self-assembly process is demonstrated. Nanoparticles were fabricated by a DC magnetron sputtering process. A silicon substrate was initially patterned with arrays of peak and valley photoresist structures using inexpensive patterning techniques. When the nanoparticles were deposited onto the prepatterned substrate, due to surface topography induced local increase in the electric field created by the charges on the nanoparticles, the nanoparticles were self-assembled onto the peaks of the structures and formed long nanowire arrays.

Information

Type
Reviews
Copyright
Copyright © Materials Research Society 2011
Figure 0

FIG. 1.(a) Nanoparticle deposition system. (b) TEM image of the nanoparticles after 10 min deposition.

Figure 1

FIG. 2.AFM image of photoresist line array patterns from the fracture induced patterning technique (a) before and (b, c) after nanoparticles deposition.

Figure 2

FIG. 3.FESEM images of nanoparticle line distribution on the photoresist patterns.

Figure 3

FIG. 4.AFM images of the nanoparticle line structures on the photoresist patterns with different deposition time. (a) Plane view and cross section profile after 2 min deposition. (b) 3D view of the nanowire sitting on the photoresist peak after 2 min deposition. (c) AFM planar images and cross section profiles of nanowires obtained after 2 min deposition. (d) AFM planar images and cross section profiles of nanowires obtained after 10 min deposition.

Figure 4

FIG. 5.Nanowires form nanoparticles before and after photoresist removal. (a) AFM image of the nanoparticle line array on the photoresist patterns before photoresist removal (scan size: 10 μm × 10 μm and 3 μm × 3 μm for the inset). (b) AFM image of the nanoparticle nanowires after photoresist removal (scan size: 3.2 μm × 3.2 μm). (c) Section profile of the nanowires after photoresist removal.