Hostname: page-component-74656f9884-c52kr Total loading time: 0 Render date: 2026-11-07T20:35:23.707Z Has data issue: false hasContentIssue false

Quantitative microstructural imaging by scanning Laue x-ray micro- and nanodiffraction

Published online by Cambridge University Press:  08 June 2016

Xian Chen
Affiliation:
Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong; xianchen@ust.hk
Catherine Dejoie
Affiliation:
Department of Materials, ETH Zürich, Switzerland; c.dejoie@mat.ethz.ch
Tengfei Jiang
Affiliation:
Department of Materials Science and Engineering and Advanced Materials Processing and Analysis Center, University of Central Florida, USA; Tengfei.Jiang@ucf.edu
Ching-Shun Ku
Affiliation:
Scientific Research Division, National Synchrotron Radiation Research Center, Taiwan; csku@nsrrc.org.tw
Nobumichi Tamura
Affiliation:
Advanced Light Source, Lawrence Berkeley National Laboratory, USA; ntamura@lbl.gov

Abstract

Local crystal structure, crystal orientation, and crystal deformation can all be probed by Laue diffraction using a submicron x-ray beam. This technique, employed at a synchrotron facility, is particularly suitable for fast mapping the mechanical and microstructural properties of inhomogeneous multiphase polycrystalline samples, as well as imperfect epitaxial films or crystals. As synchrotron Laue x-ray microdiffraction enters its 20th year of existence and new synchrotron nanoprobe facilities are being built and commissioned around the world, we take the opportunity to overview current capabilities as well as the latest technical developments. Fast data collection provided by state-of-the-art area detectors and fully automated pattern indexing algorithms optimized for speed make it possible to map large portions of a sample with fine step size and obtain quantitative images of its microstructure in near real time. We extrapolate how the technique is anticipated to evolve in the near future and its potential emerging applications at a free-electron laser facility.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2016 
Figure 0

Figure 1. Outline of the x-ray microdiffraction beamline (12.3.2) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The synchrotron x-ray beam is focused to submicron size via a pair of Kirkpatrick–Baez (KB) mirrors onto the sample. A four-bounce monochromator can be inserted into the beam path to switch between polychromatic and monochromatic radiation. An area detector and a solid-state detector are used to collect diffraction patterns and x-ray fluorescence, respectively.28

Figure 1

Figure 2. An inside view of the future FORMOSA (focus x-rays for microstructure analysis) end station at the Taiwan Photon Source in Taiwan. Note: XEOL, x-ray excited optical luminescence; DAXM, differential aperture x-ray microscopy; SDD, silicon-drift detector; SEM, scanning electron microscope; SED, secondary electron detector; UHV, ultrahigh vacuum; HV, high vacuum; STM, I–V, scanning tunneling microscope, current–voltage; HFM, horizontal focusing mirror; VFM, vertical focusing mirror; VT-stage, ScientaOmicron Inc. VT series stage.

Figure 2

Figure 3. Change in Laue patterns of Zn45Au30Cu25 from (a) pure austenite phase (cubic, $Fm\bar 3m$) at –10°C, through (b) a transition phase to (c) a pure martensite phase (monoclinic, P21) at –50°C. (d) Stereographic projections of crystallographic planes of the pure austenite phase (red dots), the transition phase (blue dots), and the martensite planes (black boxes).58

Figure 3

Figure 4. (a) Deviatoric stress mapping of through-Si vias (TSVs) during (top) and after (bottom) annealing at 200°C for 1 h, and grain orientation mapping after annealing, indicating thermomechanical effects. The numbers below each stress map represent the average deviatoric stress components over the sampled area in MPa.69 (b) (i) Average peak width (APW) map for a Cu via shows local plasticity near the top of the TSV, with (ii) the broadening of a Cu 024 Laue diffraction shown. (iii) Out-of-plane orientation (∆φ) map for Si surrounding the via indicates lattice bending around the TSV.68 Note: ${\rm{\sigma }}_{XX}^\prime$, ${\rm{\sigma }}_{YY}^\prime$, ${\rm{\sigma }}_{ZZ}^\prime$, ${{\rm{\sigma }}_{XY}}$, ${{\rm{\sigma }}_{XZ}}$, and ${{\rm{\sigma }}_{YZ}}$, deviatoric stress components in the sample coordinate system.

Figure 4

Figure 5. Laue microdiffraction maps of a laser-assisted 3D printed Ni-based superalloy showing the transition from a columnar dendritic region to a polycrystalline region. From left to right, crystal orientation, high-angle grain boundaries, low-angle grain boundaries, and deviatoric diagonal stress component maps.75 Note: ${\rm{\sigma }}_{XX}^\prime$, ${\rm{\sigma }}_{YY}^\prime$, and ${\rm{\sigma }}_{ZZ}^\prime$, deviatoric stress components in the sample coordinate system.

Figure 5

Figure 6. (a) Ewald construction for Laue mode (5–24 keV), monochromatic mode (12 keV), and 4% bandpass mode (average energy E = 12 keV). Accessible reflections fall into the shaded areas. (b) Incident flux curve (red, convoluted with the detector response), determined from a single Laue pattern of calcite. The theoretical calculated incident white beam flux is also displayed for comparison.77 (c) Distribution of the ratio between the intensity of the (41$\bar 6$) reflection of the orthorhombic phase to the intensity of the (81$\bar 9$) of the monoclinic phase, I(41$\bar 6$)/I(81$\bar 9$), over an indigo-doped silicalite single crystal. The increase in the intensity ratio from the orthorhombic to the monoclinic domain is consistent with the space group Pnma.79 Note: Emax, maximum energy; Emin, minimum energy.