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Using tapered interfaces to manipulate nanoscale morphologies in ion-doped block polymers

Published online by Cambridge University Press:  04 May 2015

Wei-Fan Kuan
Affiliation:
Department of Chemical and Biomolecular Engineering, University of Delaware, Newark, Delaware 19716, USA
Ellen H. Reed
Affiliation:
Department of Chemical and Biomolecular Engineering, University of Delaware, Newark, Delaware 19716, USA
Ngoc A. Nguyen
Affiliation:
Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
Michael E. Mackay
Affiliation:
Department of Chemical and Biomolecular Engineering, University of Delaware, Newark, Delaware 19716; Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
Thomas H. Epps III*
Affiliation:
Department of Chemical and Biomolecular Engineering, University of Delaware, Newark, Delaware 19716; Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
*
Address all correspondence to Thomas H. Epps, III atthepps@udel.edu

Abstract

We detail the influence of tapered interfaces on the nanoscale morphologies of ion-doped poly(styrene-b-oligo-oxyethylene methacrylate) block polymers (BPs). Most significantly, the location of double-gyroid network phase window was found in ion-doped normal-tapered materials, and a similar window was not detectable in the corresponding non-tapered and inverse-tapered BPs. Additionally, the effective interaction parameters, χeff, were reduced substantially in the tapered materials in comparison with their non-tapered counterparts. Overall, this work demonstrates that tapering between polymer blocks provides unique control over BP morphologies and improves the material processability (due to lower χeff), potentially facilitating the development of future ion-conducting devices.

Information

Type
Polymers/Soft Matter Research Letters
Copyright
Copyright © Materials Research Society 2015 
Figure 0

Figure 1. (a) Illustration of non-tapered, normal-tapered, and inverse-tapered BPs. (b) Phase behavior of non-tapered P(S-OEM), normal-tapered P(S-SOEM-OEM), and inverse-tapered P(S-OEMS-OEM) BPs as a function of the ion-doping ratio. LAM, lamellae; HEX, hexagonally packed cylinders; DIS, disordered phase; DG, double gyroid.

Figure 1

Figure 2. SAXS profiles for (a) P(S-OEM), (b) P(S-SOEM-OEM), and (c) P(S-OEMS-OEM) with various ion-doping ratios at 120 °C. The relative peak ratios (q/q*) are indicated by arrows, and the phase assignment is color-coded: red, LAM; green, HEX; gray, DIS; purple, DG. All SAXS samples were pre-annealed at 120 °C for 2 h, heated to 150 °C for 2 h, and then cooled to 30 °C, all under dynamic vacuum. Data are shifted vertically for clarity.

Figure 2

Figure 3. TEM images for LiCF3SO3-doped polymers at [EO]:[Li] = 18:1: (a) P(S-OEM); (b) P(S-SOEM-OEM); (c) P(S-OEMS-OEM). TEM specimens were cut into ≈70 nm slices from the thermally annealed SAXS samples at −120 °C on a cryo-microtome. The POEM domains were stained preferentially with RuO4 vapor to enhance domain contrast prior to imaging. (d) Isothermal frequency sweeps for 18:1 LiCF3SO3-doped P(S-OEM) at 110 °C and 18:1 LiCF3SO3-doped TBPs. DMA results for both TBPs were shifted according to time-temperature superposition using a reference temperature of 70 °C. 8 mm diameter parallel plates were utilized for the DMA experiments. Data were collected at a strain of 3%. Dash lines are included for visual clarity of the terminal responses. The number in the legend represents the [EO]:[Li] ion-doping ratio for the sample. The brightness in (c) was enhanced for visual clarity.

Figure 3

Figure 4. Temperature dependence of χeff for disordered P(S-OEM), P(S-SOEM-OEM), and P(S-OEMS-OEM). The number in the legend represents the [EO]:[Li] ion-doping ratio for the sample.

Figure 4

Figure 5. Normalized domain spacings as a function of ion-doping ratio for P(S-OEM), P(S-SOEM-OEM), and P(S-OEMS-OEM). d48 represents the domain spacing of each polymer at [EO]:[Li] = 48:1. Error bars are standard deviations from the SAXS data. For comparison purposes, the normalized domain spacing of the DG-forming P(S-SOEM-OEM), [EO]:[Li] = 18:1, was using d = 2π/(q*√6).

Supplementary material: PDF

Kuan supplementary material S1

Kuan supplementary material

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