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A new nanoindentation creep technique using constant contact pressure

Published online by Cambridge University Press:  02 July 2019

Olena Prach*
Affiliation:
Physical Metallurgy, Materials Science, Technische Universität Darmstadt, Darmstadt 64287, Germany
Christian Minnert
Affiliation:
Physical Metallurgy, Materials Science, Technische Universität Darmstadt, Darmstadt 64287, Germany
Kurt E. Johanns
Affiliation:
Physical Metallurgy, Materials Science, Technische Universität Darmstadt, Darmstadt 64287, Germany
Karsten Durst
Affiliation:
Physical Metallurgy, Materials Science, Technische Universität Darmstadt, Darmstadt 64287, Germany
*
a)Address all correspondence to this author. e-mail: prach@phm.tu-darmstadt.de

Abstract

A new constant contact pressure (CCP) indentation creep method is presented, which is based on keeping the mean contact pressure as defined through Sneddon’s hardness constant, until a steady-state strain rate is achieved. This is in contrast to the conventional constant load–hold (CLH) creep experiments, where the load is held constant and relaxation in both hardness and strain rate occurs at the same time. Besides controlling the mean contact pressure, the dynamic stiffness is furthermore used to assess the indentation depth, thereby minimizing thermal drift influence and pile-up or sink-in effects during long-term experiments. The CCP method has been tested on strain rate sensitive ultrafine-grained (UFG) CuZn30 and UFG CuZn5 as well as on fused silica, comparing the results with those of strain rate jump tests as well as the CLH nanoindentation creep tests. With the CCP method, strain rates from 5 × 10−4 s−1 down to 5 × 10−6 s−1 can be achieved, keeping the mean contact pressure constant over a long period of time, in contrast to the CLH method. The CCP technique thus offers the possibility of performing long-term creep experiments while retaining the contact stress underneath the tip constant.

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Type
Article
Copyright
Copyright © Materials Research Society 2019 
Figure 0

Figure 1: Schematic illustration of the resulting strain rate and plastic zone volume Vplast evolution underneath an indenter during SRJ, CLH, and CCP tests.

Figure 1

Figure 2: The CCP experiments on the UFG CuZn30: (a) load versus depth, (b) raw indentation and corrected indentation depth versus time, and (c) contact pressure versus time.

Figure 2

Figure 3: (a) Raw contact pressure values versus time, (b) raw contact pressure values versus indentation depth, and (c) strain rate versus contact pressure for CCP and CLH experiments of the UFG CuZn30.

Figure 3

Figure 4: (a) Evaluated contact pressure data for the CLH and CCP experiments versus time and (b) strain rate versus time on the UFG CuZn30.

Figure 4

Figure 5: (a) SRS m of CuZn30, based on SRJ and CCP tests. The contact pressure in the initial loading segment of the CCP experiment is marked as constant strain rate. (b) Corresponding load versus time plot for different contact pressures. The dashed line represents the load at the target depth.

Figure 5

Figure 6: Results from nanoindentation CCP, CLH, and SRJ test of (a) fused Silica, (b) HPT CuZn30, and (c) HPT CuZn5.

Figure 6

Figure 7: Depth profiles after (a) CCP and (b) CLH experiments on CuZn30.

Figure 7

TABLE I: SRS m and activation volume A obtained by nanoindentation for HPT CuZn30, HPT CuZn5, and FQ in this study.