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Nanocrystal solids: A modular approach to materials design

Published online by Cambridge University Press:  13 January 2012

Dmitri V. Talapin*
Affiliation:
Department of Chemistry at the University of Chicago; dvtalapin@uchicago.edu

Abstract

Colloidal nanocrystals can combine the benefits of inorganic semiconductors with size-tunable electronic structure and inexpensive solution-based device fabrication. Single- and multicomponent nanocrystal assemblies, also known as superlattices, provide a powerful general platform for designing two- and three-dimensional solids with tailored electronic, magnetic, and optical properties. Such assemblies built of “designer atoms” can be considered as a novel type of condensed matter, whose behavior depends both on the properties of individual building blocks and on the interactions between them. Efficient charge transport is crucial for applications of nanocrystal-based materials in various electronic and optoelectronic devices. For a long time, nanocrystals were considered poor electronic conductors. To facilitate charge transport, we developed novel surface chemistry using all-inorganic ligands, namely metal chalcogenide complexes that transformed colloidal nanomaterials into a very competitive class of solution-processed semiconductors for electronic, thermoelectric, and photovoltaic applications.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2012
Figure 0

Figure 1. (a) Stack of quantum wells made of a semiconductor with the bandgap energy Egb showed as dark regions separated with barrier layers made of a semiconductor with the bandgap energy Ega—semiconductor superlattice that allows precise tuning of the electronic structure along the stack direction as shown in panel (b).

Figure 1

Figure 2. (a) Each nanocrystal has a solid core and a shell of surface ligands that provide stability to colloidal solutions and passivate surface dangling bonds. (b) Surface ligands also provide control over nanocrystal nucleation and growth and allow for the collection of samples with tight size and shape distributions. (c) An example of a nanostructure where an electron and hole have different confinement regimes: the electron and hole with the wave functions Ψe and Ψh are confined in two and three dimensions, respectively. (d–e) Tetrapod-like nano-heterostructures where arms behave as light-harvesting antennas funneling excitation into the central core. (f) Multifunctional nano-heterostuctures with magnetic FePt cores integrated into semiconducting PbS shells. Adapted from References 13, 14, 16, and 17. Note: CB, conduction band; VB, valence band.

Figure 2

Figure 3. Transmission electron microscopy image of a superlattice self-assembled from 7.5 nm PbS nanocrystals. The inset shows optical micrographs of three-dimensional “supercrystals” grown from nanocrystals.19

Figure 3

Figure 4. Electron microscopy images of binary nanoparticle superlattices (BNSLs) self-assembled from various semiconductor, metallic, and magnetic nanocrystals. The bottom-right corner insets show the unit cells of corresponding structures. (a) AuCu-type BNSL formed by 7.6 nm PbSe and 5.0 nm Au nanocrystals; (b) AlB2-type BNSL assembled from 13.4 nm Fe2O3 and 5.8 nm PbSe nanocrystals. The top-left corner inset shows the small-angle electron diffraction pattern. (c) Laves phase MgZn2 type BNSL formed by 6.2 nm PbSe and 3.0 nm Pd nanocrystals. (d) CaCu5 type BNSL formed by 8.7 nm CdSe and 5.5 nm Au nanoparticles. (e) NaZn13 type BNSL formed by 5.8 nm PbSe and 3.0 nm Pd nanocrystals. (f) BNSL self-assembled from LaF3 triangular nanoplates (9.0 nm side) and 5.0 nm spherical Au nanocrystals. Adapted from Reference 20.

Figure 4

Figure 5. A dodecagonal quasicrystalline superlattice self-assembled from 13.4 nm Fe2O3 and 5 nm Au nanocrystals. Inset shows a selected area electron diffraction pattern with crystallographically forbidden 12-fold rotational symmetry. Adapted from Reference 30.

Figure 5

Figure 6. First nanocrystal-based transistors. (a) High-resolution cross-section scanning electron microscopy image of a field-effect transistor (FET) channel assembled from PbSe nanocrystals (NCs). The inset shows a schematic of a NC FET with source (S), drain (D), and gate (G) electrodes. (b–d) Typical output and transfer characteristics of n- and p-type PbSe NC FETs. (b) Plot of drain current ID versus drain-source voltage VDS, as a function of gate voltage VG for an FET with a channel composed of 8 nm PbSe NCs. (c) Plots of ID and IDS1/2 versus VG at constant VDS = 40 V used to calculate current modulation and field-effect mobility in the saturation regime for n-channel FET assembled from 8.1 nm PbSe NCs n-doped with hydrazine. (d) Plot of ID and ID1/2 versus VG at constant VDS = –40 V for p-channel FET assembled from 8.4 nm PbSe NCs. Adapted from Reference 35.

Figure 6

Figure 7. (a) Schematic of the ligand exchange process used for preparation of all-inorganic nanocrystals (NCs) capped with SnS44– metal chalcogenide complex (MCC). (b) Stable colloidal solutions of 3.6 nm CdSe nanocrystals capped with various MCCs. (c) From left to right: stable colloidal solutions obtained by combining (N2H5)4Sn2S6 with 3.6 and 5.8 nm CdSe NCs, 9 nm CdTe NCs, 5 × 60 nm CdS nanorods (Nrods), CdSe nanowires (Nwires), 6 × 25 nm Bi2S3 nanorods, 5 nm Au NCs, and 3 nm Pd NCs. Adapted from References 40 and 41.

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Figure 8. Colloidal nanocrystals as soluble precursors for inorganic semiconductors. (a) High electron mobility in a spin-coated layer of 3.9 nm CdSe nanocrystals bridged with In2Se42– molecular metal chalcogenide ligands. The mobility decreased with increasing temperature, typical for the band-like charge transport. (b) Photoconductive response at 500 nm measured for an array of CdSe/CdS core-shell nanocrystals bridged with In2Se42– ligands. The combination of highly mobile electrons distributed between CdSe cores and CdS shells and the holes strongly confined to the CdSe cores provide high internal photoconductive gain in the CdSe/CdS nanocrystal solids.42 (c) Transmission electron microscopy image of a thermoelectric PbTe/(Bi,Sb)2Te3 nanostructured composite prepared by combining PbTe and Bi2S3 nanocrystals, both capped with Sb2Te74– molecular metal chalcogenide complex.48 This approach allows for the preservation of the benefits of nanostructuring and quantum confinement while enabling facile charge transport through the interparticle boundaries necessary for high thermoelectric efficiency. The insets show corresponding colloidal solutions used as precursors for the deposition of functional materials. Adapted from References 42 and 48.