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Initial perturbation dependence on Richtmyer–Meshkov instability with reshock

Published online by Cambridge University Press:  21 July 2025

Yumeng Zhang
Affiliation:
State Key Laboratory of High Temperature Gas Dynamics, School of Engineering Science, University of Science and Technology of China, Hefei 230026, PR China
Yong Zhao
Affiliation:
State Key Laboratory of High Temperature Gas Dynamics, School of Engineering Science, University of Science and Technology of China, Hefei 230026, PR China
Zhangbo Zhou
Affiliation:
State Key Laboratory of High Temperature Gas Dynamics, School of Engineering Science, University of Science and Technology of China, Hefei 230026, PR China
Juchun Ding*
Affiliation:
State Key Laboratory of High Temperature Gas Dynamics, School of Engineering Science, University of Science and Technology of China, Hefei 230026, PR ChinaLaoshan Laboratory, Qingdao 266237, PR China
Xisheng Luo*
Affiliation:
State Key Laboratory of High Temperature Gas Dynamics, School of Engineering Science, University of Science and Technology of China, Hefei 230026, PR China
*
Corresponding authors: Xisheng Luo, xluo@ustc.edu.cn; Juchun Ding, djc@ustc.edu.cn
Corresponding authors: Xisheng Luo, xluo@ustc.edu.cn; Juchun Ding, djc@ustc.edu.cn

Abstract

The Richtmyer–Meshkov instability at gas interfaces with controllable initial perturbation spectra under reshock conditions is investigated both experimentally and theoretically. A soap-film method is adopted to generate well-defined single-, dual- and triple-mode air/SF$_6$ interfaces. By inserting an acrylic block into the test section, a reflected shock with controllable reshock timing is created. The results reveal a complex relationship between the post-reshock perturbation growth rate and the pre-reshock interface morphology. For single-mode interfaces, the post-reshock growth rate exhibits a strong dependence on pre-reshock conditions. In contrast, for multi-mode interfaces, this dependence weakens significantly due to mode-coupling effects. It is found that, following reshock, each fundamental mode develops independently and later is significantly influenced by mode-coupling effects. Based on this finding, we propose an empirical model that matches the initial linear growth rate and the asymptotic growth rate, accurately predicting the evolution of fundamental modes from early to late stages across all three configurations. Furthermore, a theoretical formula is derived, linking the empirical coefficient in the model of Charakhch’An (2020 J. Appl. Mech. Tech. Phys. vol. 41, no. 1, pp. 23–31) to the initial perturbation. This provides a unified framework to explain the varying dependence of post-reshock growth rates on pre-reshock morphology observed in previous experiments.

Information

Type
JFM Papers
Copyright
© The Author(s), 2025. Published by Cambridge University Press
Figure 0

Figure 1.Schematic diagrams showing (a) the formation of the initial interface and (b) the generation of the reflected shock.

Figure 1

Figure 2.Sketches of the experimental set-up for the reshocked RMI at (a) a single-mode interface, (b) a dual-mode interface and (c) a triple-mode interface.

Figure 2

Table 1.Detailed parameters corresponding to the initial conditions for each case. Here, $L$ refers to the distance between the interface and the end wall, $\lambda$ to the wavelength, $ka^-_{r}$ to the product of the wavenumber and pre-reshock amplitude, Vfra(SF$_6$) to the volume fraction of SF$_6$ on the right side of the interface, $\Delta V_2$ to the interface velocity jump caused by reshock, $A^+$ and $A_r^+$ to the post-shock and post-reshock Atwood numbers, respectively, ${\textrm{d}a_1}/{\textrm{d}t}$ and ${\textrm {d}a_2}/{\textrm{d}t}$ stand for the pre-reshock and post-reshock growth rates, respectively, $V_s^{{lin}}$ is the linear growth rate predicted by (3.2) and $V^{{lin}}$ is post-reshock growth rate calculated with (3.3).

Figure 3

Figure 3.Sequences of schlieren images illustrating the instability growth for various single-mode cases: IS, incident shock; II, initial interface; SI, shocked interface; TS$_1$, the first transmitted shock; TS$_2$, the second transmitted shock; RTS, reflected transmitted shock; RW$_1$, the first rarefaction wave. The numbers are in $\unicode {x03BC}$s.

Figure 4

Figure 4.An $x$–$t$ diagram showing the trajectories of the interface and waves for different reflection distances (a) 40 mm, (b) 80 mm and (c) 160 mm.

Figure 5

Figure 5.Morphologies of the whole interface extracted from schlieren images and the basic modes obtained with Fourier analysis at the time of reshock for (a) case M1-40-$S$, (b) case M1-40-$L$, (c) case M1-20-$L$ and (d) case M1-30-$L^{+}$.

Figure 6

Figure 6.Sequences of schlieren images for various dual-mode cases. The unit of numbers is $\unicode {x03BC}$s. The symbols are the same as those in figure 3.

Figure 7

Table 2.Detailed parameters corresponding to the initial conditions for dual-mode cases. Here, $L$ refers to the distance from the interface to the end wall, $\lambda$ to the wavelength, $\phi$ to the perturbation phase, Vfra(SF$_6$) to the volume fraction of SF$_6$ on the right side of the interface, $\Delta V_2$ to the velocity jump of the interface caused by reshock and $A^+$ and $A_r^+$ to the post-shock and post-reshock Atwood numbers, respectively.

Figure 8

Figure 7.Morghologies of the whole interface extracted from schlieren images and the basic modes obtained with Fourier analysis at the time of reshock for (a) case M2-0-$S$, (b) case M2-$\pi$-$S$, (c) case M2-0-$L$ and (d) M2-$\pi$-$L$.

Figure 9

Table 3.Detailed parameters corresponding to the initial conditions for dual-mode cases. Here, $a_{r}^0$ refers to the interface amplitude at the moment before the reshock, $a_{r}^+$ to the interface amplitude at the moment after the reshock, $ V^{{lin}}$ to the post-reshock growth rate of the interface and ${\textrm {d}a_1}/{\textrm{d}t}$ to the pre-reshock growth rate of the interface. The symbols ‘+’ and ‘−’ indicate whether the phase is in phase with the first-order fundamental mode (+) or out of phase (−).

Figure 10

Figure 8.The amplitude growths of modes $k$ (a) and 2$k$ (b) for dual-mode cases following reshock.

Figure 11

Table 4.Detailed parameters corresponding to the initial conditions for triple-mode cases. Here, $L$ refers to the distance from the interface to the end wall, $\lambda$ to the wavelength, $\phi$ to the perturbation phase, Vfra(SF$_6$) to the volume fraction of SF$_6$ on the right side of the interface, $\Delta V_2$ to the interface velocity jump caused by reshock and $A^+$ and $A_r^+$ to the post-shock and post-reshock Atwood numbers, respectively.

Figure 12

Figure 9.Sequences of schlieren images for various triple-mode cases. The unit of numbers is $\unicode {x03BC}$s. The symbols are the same as those in figure 3.

Figure 13

Figure 10.Morphologies of the interface extracted from schlieren images and the basic modes obtained with Fourier analysis at the time of reshock for (a) case M3-0-$S$, (b) case M3-$\pi$-$S$, (c) case M3-0-$L$ and (d) case M3-$\pi$-$L$.

Figure 14

Table 5.Main parameters corresponding to the perturbation growth in triple-mode cases. Here, $a_{r}^-$ refers to the interface amplitude at the moment before the reshock, $a_{r}^+$ to the interface amplitude at the moment after the reshock, $ V^{{lin}}$ to the post-reshock growth rate of the interface, ${\textrm{d}a_1}/{\textrm{d}t}$ to the pre-reshock growth rate of the interface and ‘ +’ and ‘−’ denote whether the phase is in phase with the first-order fundamental mode (+) or out of phase with it (−).

Figure 15

Figure 11.The amplitude growths of modes (a) $k$ , (b) 2$k$ and (c) 3$k$ for triple-mode cases following reshock.

Figure 16

Figure 12.The growth of the mixing width for (a) single-mode, (b) dual-mode and triple-mode interfaces. The solid lines denote the prediction of (3.3), the dash-dot-dotted lines denote the prediction of (4.10), and the dashed lines indicate the time at which the reflected rarefaction wave (RRW$_1$) interacts with the interface. Note that the time at which the reflected rarefaction wave interacts with the interface under short, long and extended reflection distances, are respectively labelled as RRW-$S$, RRW-$L$ and RRW-$L_x$.

Figure 17

Table 6.Detailed parameters corresponding to the initial conditions for single-mode cases. Here, $ka_{kr}$ refers to the product of wavenumber and amplitude at reshock for low-order interface, $2ka_{2kr}$ to the product of wavenumber and amplitude at reshock for second-order interface, ‘−’ indicates the opposite phase of the low-order interface, ${\textrm{d}a_2}/{\textrm {d}t}$ refers to the post-reshock growth rate of the interface, $V^{{lin}}$ to growth rate after reshock calculated with (3.3) and $\bar {V}^H$ to the average growth rate after reshock calculated with (4.10).

Figure 18

Table 7.Here, $\beta$ and $\beta ^H$ refer to the factors calculated using (6.1) and (6.2), respectively. $\beta ^H$ is a linear fit with time.

Figure 19

Figure 13.The variation of $\beta$ with $\bar ka_{r0}$.