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Effect of twisting fatigue on the electrical reliability of a metal interconnect on a flexible substrate

Published online by Cambridge University Press:  04 December 2017

Jung-Kwon Yang
Affiliation:
Department of Materials Science & Engineering, Seoul National University, Seoul 08826, Korea
Young-Joo Lee
Affiliation:
Department of Materials Science & Engineering, Seoul National University, Seoul 08826, Korea
Seol-Min Yi
Affiliation:
Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea
Byoung-Joon Kim*
Affiliation:
School of Materials Science and Engineering, Andong National University, Andong, Gyeongbuk-do 36729, Korea
Young-Chang Joo*
Affiliation:
Department of Materials Science & Engineering, Seoul National University, Seoul 08826, Korea
*
a) Address all correspondence to these authors. e-mail: bjkim@anu.ac.kr
b) e-mail: ycjoo@snu.ac.kr

Abstract

To secure the reliability of flexible electronics, the effect of multicomponent stress on the device properties during complex mechanical deformation needs to be thoroughly understood. The electrical resistances of metal interconnects are investigated by in situ monitoring at different twisting angles and with different pattern positions. As the twisting angle increased, the electrical resistance increased earlier. Furthermore, in the line pattern located far from the central axis, severe electrical degradation and fatigue damage formation were observed. Multicomponent stress evolution during twisting was analyzed by the finite-element simulation method. For easy practical application for estimating the representative twisting strain, an analytic solution of twisting deformation was formulated and compared with the simulation. Using the equivalent strain, the fatigue lifetime was fitted, and the exponents were obtained for lifetime expectation. This systematic study provides the guidelines for highly reliable flexible devices and the tools for determining the expected fatigue lifetime.

Information

Type
Articles
Copyright
Copyright © Materials Research Society 2017 
Figure 0

FIG. 1. Schematics of (a) Cu interconnects used on the PI substrate with different positions on the x-axis and (b) twisting tester. Change of the normalized resistance as a function of the twisting cycles with different x positions of x = 0, 1, 2, 3, 4, and 4.5 mm under (c) 90°, (d) 120°, (e) 150°, and (f) 180°. The tester rotates periodically from clockwise to counterclockwise alternatively.

Figure 1

TABLE I. Fatigue lifetime according to the x position and twisting angle.

Figure 2

FIG. 2. FESEM and OM images of surface damage morphologies after the twisting test. Initial damage formation where the resistance change of Cu interconnects reached 5% (a) at x = 2 mm under 90°, 150°, and 180° and (b) at x = 0, 1, 2, 3, 4, and 4.5 mm under 180° by FESEM. (c) Surface damage in a whole view of electrically failed Cu interconnects after 50,000 cycles of twisting under 180° by OM.

Figure 3

FIG. 3. Analysis of the stress and strain distribution by the FEM simulation and analytic solution. (a) Distribution of the equivalent stress with different angles and (b) analysis of each of the strain component values of the position and the twisting angle by the FEM simulation. (c) The analytic model for the shear and tensile strain against the axial shortening and (d) calculated values of the strain components by the analytic solution. (e) Comparison of equivalent strain values by using the FEM simulation and analytic solution.

Figure 4

FIG. 4. Strain of the single component of (a) shear or (b) tensile strain versus the number of cycles to failure. (c) Equivalent strain versus the number of cycles to failure. The Coffin–Manson and Basquin relationships are well fitted in the LCF and HCF regions, respectively. Open symbols mean that the resistance change of the Cu interconnects was not over 5% until after 105 cycles.