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Controlling the nanoscale morphology and structure of the ZnO/MnO2 system for efficient transparent supercapacitors

Published online by Cambridge University Press:  21 March 2017

M. A. Borysiewicz*
Affiliation:
Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
M. Wzorek
Affiliation:
Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
M. Ekielski
Affiliation:
Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
J. Kaczmarski
Affiliation:
Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
T. Wojciechowski
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
*
Address all correspondence to M. A. Borysiewicz at mbory@ite.waw.pl

Abstract

We discuss relationships between transparent supercapacitor performance and the morphology of its ZnO nanostructured electrodes. The electrodes with different morphologies were prepared by magnetron sputtering and postdeposition annealing. They were decorated with MnO2 nanostructures and tested in symmetric transparent supercapacitors. The capacitances for discharging at 10 µA/cm2 were in the range of 20–53 µF/cm2, meaning that an increase of 250% in capacitance can be obtained by optimizing the electrode morphology. Optimal morphologies were hierarchical with a large range of pore sizes available. The worst performing had the smallest range of pore sizes. Best devices exhibited transparencies above 90%.

Information

Type
Research Letters
Copyright
Copyright © Materials Research Society 2017 
Figure 0

Figure 1. SEM plan view images of the ZnO electrodes. The numbers correspond to sample names.

Figure 1

Figure 2. Selected statistical parameters of the pores in the electrodes, yielded from image analysis of the SEM images.

Figure 2

Figure 3. Results of the performance tests of the supercapacitors. (a) Effective discharge capacity as a function of discharge current; (b) charge/discharge curves for 10 µA charge/discharge currents; (c) CV sweeps with the rate 1 V/s; (d) integrated CV current as a function of the CV scan rate.

Figure 3

Figure 4. Results of electrochemical impedance spectroscopy. (a) Nyquist plots in the high frequency range, inset showing the full range in a log–log scale; (b) phase of the complex impedance as a function of the probing frequency; (c) the equivalent circuit used for fitting of the impedance versus frequency dependence.

Figure 4

Table I. Model fit parameters for EIS, ESR—series resistance, Y0, α, and Y02, α2—the parameters of the first and second CPEs, Wd—Warburg diffusion impedance, and R—resistance in the low-frequency CPE + R circuit. The symbols relate to the schematic in Fig. 4(c).

Figure 5

Figure 5. (a) Optical transmission spectra for the supercapacitors; (b) optical transmission at 500 nm and energy gap for the devices. The visible oscillations are related to light interference in the device. Inset in (b) shows a photograph of the “20:2” device in front of the logo of the Institute of Electron Technology.

Supplementary material: PDF

Borysiewicz supplementary material

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