Hostname: page-component-74656f9884-npj9w Total loading time: 0 Render date: 2026-11-07T05:33:13.646Z Has data issue: false hasContentIssue false

Characterizing interface dislocations by atomically informed Frank-Bilby theory

Published online by Cambridge University Press:  24 April 2013

Jian Wang*
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico87545
Ruifeng Zhang
Affiliation:
Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico87545
Caizhi Zhou
Affiliation:
Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico87545
Irene J. Beyerlein
Affiliation:
Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico87545
Amit Misra
Affiliation:
Materials Physics & Applications, The Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico87545
*
a)Address all correspondence to this author. e-mail: wangj6@lanl.gov

Abstract

Semicoherent interfaces containing discrete dislocations are more energetically favorable than those containing continuous distributions because of lower chemical energy. The classical Frank-Bilby theory provided a way to determine the interface Burgers vectors content but could not effectively predict the characteristics of discrete dislocations. Atomistic simulations provide insights into analyzing the characteristics of discrete dislocations but the analysis is often disturbed by the reaction of interface dislocations. By combining the classical Frank-Bilby theory and atomistic simulations, an atomically informed Frank-Bilby theory proposed in this work can overcome shortcomings in both the classic Frank-Bilby theory and atomistic simulations, and enable quantitative analysis of interface dislocations. The proposed method has been demonstrated via studying two typical dissimilar metallic interfaces. The results showed that Burgers vectors of interface dislocations can be well defined in a Commensurate/Coherent Dichromatic Pattern (CDP) and the Rotation CDP (RCDP) lattices. Most importantly, the CDP and RCDP lattices are not simply a geometric average of the two natural lattices, that is the lattice misfit and the relative twist take the nonequal partition of the misfit strain and the twist angle.

Information

Type
Reviews
Copyright
Copyright © Materials Research Society 2013 
Figure 0

FIG. 1. (a) The geometry of the bicrystal simulation model and (b) the natural dichromatic pattern (NDP) of the interface.

Figure 1

FIG. 2. (a) A Commensurate/Coherent Dichromatic Pattern (CDP) and natural dichromatic patterns (NDPs) between Cu and Nb. (b) the Rotation CDP (RCDP) and the corresponding NDPs. (c) Possible Burgers vectors in the CDP lattice, and (d) Possible Burgers vectors in the RCDP lattice. Three variables are employed to describe the CDP and RCDP lattices with respect to the NDPs.

Figure 2

FIG. 3. Atomic structures of (a) the unrelaxed and (b) relaxed interfaces between Cu and Nb. (c) The disregistry plot of the vector fields $r_{ij}^{R - U}$. The length of arrows indicates the magnitude of the displacements, and the color is assigned with respect to the direction of the displacement. The green lines indicate the interface dislocations.

Figure 3

FIG. 4. Identification of interface dislocations. (a) The disregistry vectors $r_{ij}^{R - C}$ and $r_{ij}^{U - C}$ as the probe vector is located at z = 0 along the x-direction. (b) The disregistry $r_{ij}^{R - U}$ corresponding to the difference between the two disregistry vectors $r_{ij}^{R - C}$and $r_{ij}^{U - C}$ in (a). rij,x and rij,z present the x-component and the z-component of the disregistry vector. The positions of interface dislocations are marked as a dislocation symbol.

Figure 4

FIG. 5. Identification of interface dislocations. (a) The disregistry vectors $r_{ij}^{R - C}$ and $r_{ij}^{U - C}$ as the probe vector is located at x = 0 along the z-direction. (b) The disregistry $r_{ij}^{R - U}$ corresponding to the difference between the two disregistry vectors $r_{ij}^{R - C}$ and $r_{ij}^{U - C}$ in (a). rij,x and rij,z present the x-component and the z-component of the disregistry vector. The positions of interface dislocations are marked as a dislocation symbol.

Figure 5

FIG. 6. Atomic structures of (a) the unrelaxed and (b) relaxed interfaces between Cu and Nb. (c) The disregistry plot of the vector fields $r_{ij}^{R - U}$. The length of arrows indicates the magnitude of the displacements, and the color is assigned with respect to the direction of the displacement. The green and yellow lines indicate the interface dislocations.

Figure 6

FIG. 7. Identification of interface dislocations. (a) The disregistry vectors $r_{ij}^{R - C}$ and $r_{ij}^{U - C}$ as the probe vector is located at x = 0 along the z-direction. (b) The disregistry $r_{ij}^{R - U}$ corresponding to the difference between the two disregistry vectors $r_{ij}^{R - C}$ and $r_{ij}^{U - C}$ in (a). rij,x and rij,z present the x-component and the z-component of the disregistry vector. The positions of interface dislocations are marked as a dislocation symbol.

Figure 7

FIG. 8. Identification of interface dislocations. (a) The disregistry vectors $r_{ij}^{R - C}$ and $r_{ij}^{U - C}$ as the probe vector is located at z = 0 along the x-direction. (b) The disregistry $r_{ij}^{R - U}$ corresponding to the difference between the two disregistry vectors $r_{ij}^{R - C}$ and $r_{ij}^{U - C}$ in (a). rij,x and rij,z present the x-component and the z-component of the disregistry vector. The positions of interface dislocations are marked as dislocation symbols.

Figure 8

FIG. 9. Identification of interface dislocations. (a) and (b) The two components of the disregistry $r_{ij}^{R - U}$ corresponding to the difference between the disregistry vectors $r_{ij}^{R - C}$ and $r_{ij}^{U - C}$ as the probe vector is located at x = 6 nm along the z-direction. rij,x and rij,z present the x-component and the z-component of the disregistry vector. The positions of interface dislocations are marked as dislocation symbols.

Figure 9

FIG. 10. Demonstration of local reactions of interface dislocations. (a) The initial pattern of two sets of interface dislocations, and (b) the relaxed, equilibrium dislocation pattern obtained by PDD simulations.