Hostname: page-component-74656f9884-2dmjx Total loading time: 0 Render date: 2026-11-09T03:31:28.422Z Has data issue: false hasContentIssue false

Preparation and electrical conductivity of graphitic carbon-infused copper alloys

Published online by Cambridge University Press:  29 January 2019

B. Ma*
Affiliation:
Applied Materials Division, Argonne National Laboratory, Argonne, IL 60439, USA
U. Balachandran
Affiliation:
Applied Materials Division, Argonne National Laboratory, Argonne, IL 60439, USA
S.E. Dorris
Affiliation:
Applied Materials Division, Argonne National Laboratory, Argonne, IL 60439, USA
T.H. Lee
Affiliation:
Applied Materials Division, Argonne National Laboratory, Argonne, IL 60439, USA
A.J. Rondinone
Affiliation:
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
*
Address all correspondence to B. Ma at bma@anl.gov

Abstract

By electron-beam (e-beam) melting, we prepared 0.4 wt% carbon-infused copper (CuCv4), and a copper control without carbon addition (CuCv0). Scanning electron microscopy and helium ion microscopy (HIM) were performed on the as-solidified surface, fracture surface, and ion-polished surface of the CuCv4 sample. The results revealed that graphitic carbon flakes cover the as-solidified surface, and carbon nanoparticles and clusters exist in the fracture and ion-polished surfaces. HIM on the ion-polished surface revealed a unique ripple-shaped feature, which is possibly associated with the infusion of carbon nanoribbons in the copper matrix. The bulk densities were measured to be 8.86 and 8.53 g/cm3, which correspond to relative densities of 98.9% and 96.4% for the CuCv0 and CuCv4 samples, respectively. In addition, apparent electrical conductivities were measured to be 56.9 and 57.5 MS/m, respectively, for the e-beam melted CuCv0 and CuCv4 samples. These values correspond to true electrical conductivities of 100.5% IACS (International Annealed Copper Standard) and 107.4% IACS after correction for the porosity. Our results reveal remarkable promise of using covetic copper for the next generation conductors in energy applications from microelectronic devices to high-power transmission cables.

Information

Type
Research Letters
Copyright
Copyright © Materials Research Society 2019 
Figure 0

Figure 1. SEM micrographs of (a) 3N Cu powder before ball milling, (b) 3N Cu powder after ball milling, (c) precursor powder mixture after bill milling, (d) high magnification SEM micrograph, (e) carbon mapping image, (f) copper mapping image, and (g) carbon and copper superimposed mapping image of precursor powder of 3N Cu with 0.4 wt% graphitic carbon input after ball milling.

Figure 1

Figure 2. Photographs of (a) molten CuCv inside an e-beam hearth during melting, (b) melted CuCv0 (left) and CuCv4 (right) nuggets, and XRD patterns of (c) as-solidified surface and (d) polished surface of CuCv4 made by e-beam melting.

Figure 2

Table I. Bulk density of CuCv0 and CuCv4 samples determined by Archimedes’ principle.

Figure 3

Figure 3. SEM micrographs of (a) as-solidified surface and (b) tensile fracture surface of CuCv4, (c) SEM EDS spectrum of the mapping area, (d) secondary electron image, (e) carbon mapping image, (f) copper mapping image, and (g) superimposed image of as-solidified surface of CuCv4.

Figure 4

Figure 4. HIM micrographs of e-beam melted CuCv4 showing (a) graphitic carbon flakes on fracture surface, (b) nanoparticles on fracture surface, (c) nanoparticles on the inner surface of a pore in ion-polished surface, and (d) ripple structure on ion-polished surface, and I–V curves of electron-beam melted (e) control CuCv0, and (f) nanocarbon-infused CuCv4.

Figure 5

Table II. Electrical conductivities of the control sample CuCv0 and the nanocarbon-infused CuCv4 measured at room temperature using thin bar specimens.