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Lattice effect in Mie-resonant dielectric nanoparticle array under oblique light incidence

Published online by Cambridge University Press:  16 November 2018

Viktoriia E. Babicheva*
Affiliation:
College of Optical Sciences, University of Arizona, 1630 E. University Blvd., P.O. Box 210094, Tucson, AZ 85721, USA
*
Address all correspondence to Viktoriia E. Babicheva at vb2@email.arizona.edu

Abstract

Ultra-thin optical structures, known as metasurfaces, have shown promising light controlling capability at the nanoscale. In this paper, we study their particular case, a periodic array of high-refractive-index nanoparticles with electric and magnetic resonances. The main result of the work is a numerical demonstration that the lattice effect in the periodic arrangement of nanoparticles changes the resonance position even if the resonances are above the diffraction wavelength (Rayleigh anomaly). We show that the disk resonance changes can be achieved not only by varying periods of the array under normal light incidence but also by changing the incident angle.

Information

Type
Research Letters
Copyright
Copyright © Materials Research Society 2018 
Figure 0

Figure 1. Absorption and scattering properties of a single silicon disk for various disk diameters under normal light incidence: (a) absorption and (b) total scattering cross-section. The black dotted lines correspond to the diameter d = 500 nm that is chosen for further analysis. The red and magenta lines mark excitation of electric and magnetic resonances, respectively, defined as maxima in absorption. The red dots indicate the wavelength of resonances for d = 500 nm. Inset in (a): schematic of the single disk under consideration. Insets in (b): E-field distribution in the EDR (λ = 1130 nm) and H-field distribution in the MDR (λ = 978 nm) for d = 500 nm. The cross-sections are different as they are in the plane of the corresponding field component (xz-plane for the EDR and yz-plane for the MDR), and the distributions are captured at the moment of corresponding field maximum inside the disk.

Figure 1

Figure 2. Schematic view of the silicon disk array in the air. Nanoparticles have diameter d and arranged into the array with the periods Dx and Dy. Light incidence k is normal to the array plane, and electric field E is along the x-axis.

Figure 2

Figure 3. Electric and magnetic resonances in the arrays of silicon disks under normal light incidence with field components (Ex, Hy, 0). (a),(c),(e) Absorption and (b),(d),(f) reflection. In panels (a) and (b) period Dx changes, and Dy is fixed. In panels (c) and (d) period Dy changes, and Dx is fixed. In panels (e) and (f) both periods change simultaneously Dx = Dy. The red dots mark the position of the resonances of the single disk identified in Fig. 1(a). The diffraction wavelength (black lines) is defined as λRA = Dx for (a) and (b), λRA = Dy for (c) and (d), or λRA = Dx = Dy for (e) and (f), and the region below the diffraction is excluded from consideration.

Figure 3

Table I. Lattice effects (LE) under the change of periodicity and angle of light incidence. Under normal incidence, the field is (Ex, Hy, 0). “LE” (or “No LE”) denotes the resonances are affected (or not) by the period changes or angle of incidence for the nanoparticle with scalar polarizability arranged in the infinite array.

Figure 4

Figure 4. Electric and magnetic resonances in the single silicon disk and arrays of disks with oblique light incidence. (a) and (b) Absorption in the single disk; (c) and (d) Absorption in the disk array; (e) and (f) Reflection in the array; (a), (c), and (e) are for TM polarization; (b), (d), and (f) are for TE polarization. In (c)-(f), the calculations are performed for a square array with periods Dx = Dy = 600 nm. The red dots mark the position of the resonances of the single disk identified in Fig. 1(a). The diffraction wavelength (black lines in (c)–(f)) is defined as λRA = D(1 + sinθ), where D = Dx for TM polarization and D = Dy for TE polarization, and the region below the diffraction is excluded from consideration (dark red color). Insets in (c) and (d) are the schematics of TM and TE light polarization with respect to the disk, respectively.

Figure 5

Figure 5. Effect of the substrate and top coating. (a) Absorption in the silicon disk array in TM polarization in the case of nanoparticles on the substrate with refractive index n = 1.5 (inset shows the basic schematics). Lines for θ = 10° and 15° are shifted by 0.1 with respect to each other for clarity. (b) The same as (a) but with an addition of a top coating of material with the same n = 1.5. The case of the substrate and top coating effectively corresponds to the uniform environment with n = 1.5. The lines for θ = 10° and 15° are interrupted at the RA wavelength. In both cases with and without top coating, the MDR shifts to larger wavelength in agreement with the case without a substrate or coating.

Figure 6

Figure 6. Absorption and scattering properties of a single disk with permittivity ε = 20 + 0.01i and h = 100 nm for various disk diameters under normal light incidence: (a) absorption and (b) total scattering cross-section.

Figure 7

Figure 7. Electric and magnetic resonances in the arrays of disks with permittivity ε = 20 + 0.01i and h = 100 nm under normal light incidence with field components (Ex, Hy, 0). (a),(c),(e) Absorption and (b),(d),(f) reflection. In panels (a) and (b) period Dx changes, and Dy is fixed. In panels (c) and (d) period Dy changes, and Dx is fixed. In panels (e) and (f) both periods change simultaneously Dx = Dy.

Figure 8

Figure 8. Electric and magnetic resonances in the single disk and arrays of disks with permittivity ε = 20 + 0.01i and h = 100 nm for oblique light incidence. (a) and (b) Absorption in single disk; (c) and (d) Absorption in the disk array; (e) and (f) Reflection in the array; (a), (c), and (e) are for TM polarization; (b), (d), and (f) are for TE polarization. For the array, the calculations are performed for a square array with periods Dx = Dy = 600 nm. Insets in (c) and (d) are the schematics for TM and TE polarization, respectively. The region below the diffraction is excluded from consideration (dark red color).