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Sr(Zn1/3Nb2/3)O3-induced R3c to P4bm transition and large field-induced strain in 0.80(Bi0.5Na0.5)TiO3–0.20SrTiO3 ceramics

Published online by Cambridge University Press:  15 April 2019

Qiumei Wei
Affiliation:
Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
Mankang Zhu*
Affiliation:
Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
Mupeng Zheng
Affiliation:
Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
Yudong Hou*
Affiliation:
Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
*
a)Address all correspondence to these authors. e-mail: zhumk@bjut.edu.cn

Abstract

Bi0.5Na0.5TiO3 (BNT)-based lead-free materials are important for piezoelectric actuator, and several researchers have studied the effect of B-site complex ion doping on strain in (Bi0.5Na0.5)TiO3–SrTiO3. In this work, a paraelectric perovskite Sr(Zn1/3Nb2/3)O3 (SZN) with B-site complex structure was introduced into 0.80(Bi0.5Na0.5)TiO3–0.20SrTiO3 (BNTST) to investigate the phase structure and electrical properties as well as the field-induced strain behavior. The results showed that SZN substitution decreases the rhombohedrality 90-γ and induces the transition from dominant ferroelectric to nonergodic relaxor by shifting its TF-R to lower temperatures. Moreover, the field-induced ferroelectric domains cannot remain stable at room temperature when SZN substitution is large than 1.0 mol%. These behaviors induced the transition between nonergodic relaxor and ergodic relaxor, which contributed to its large strain and related properties. In this work, this material gave the largest bipolar strain of 0.43% and large normalized unipolar strain of 505 pm/V at the SZN content of 2 mol% under 8 kV/mm, and showed good temperature stability up to 100 °C. The above encouraging results may be helpful for further investigation of BNTST-based ternary systems in search of a potential Pb-free piezoelectric material.

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Article
Copyright
Copyright © Materials Research Society 2019 
Figure 0

Figure 1: Powder XRD patterns (a), fine-scanning XRD patterns (b), and the composition dependence of relative intensity φ of ${{{I_{\left( {1\bar{1}1} \right)}}} / {{I_{\left( {111} \right)}}}}$ and rhombohedrality 90-γ(c) for the poled BNSZN100x samples.

Figure 1

Figure 2: BF TEM (a) and HR TEM (b) images of sample x = 0.02. The inset in (b) shows the SAED pattern alongside [111]c zone axis.

Figure 2

Figure 3: Temperature-variable XRD patterns of the poled samples x = 0 (a) and x = 0.0175 (b).

Figure 3

Figure 4: Temperature dependent dielectric response of poled BNSZN100x samples.

Figure 4

Figure 5: The frequency dependence of TR-E of samples x = 0.005–0.0275. The solid line is the fitting on the Vogel–Fulcher equation.

Figure 5

Figure 6: P–E loops and the J–E curves measured at a frequency of 1 Hz for BNSZN100x samples.

Figure 6

Figure 7: The Pr and the quasistatic piezoelectric coefficient d33 as a function of SZN.

Figure 7

Figure 8: Bipolar strain loops of BNSZN100x ceramics at room temperature (a) and the composition dependence of positive strain (Spos) and negative strain (Sneg) and normalized unipolar strain (d*33) (b).

Figure 8

Figure 9: Temperature-dependent unipolar strain (S–E) at 1 Hz of sample x = 0.02.