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In situ study of thermally activated flow and dynamic restoration of ultrafine-grained pure Cu at 373 K

Published online by Cambridge University Press:  18 September 2017

Wolfgang Blum*
Affiliation:
Institut für Werkstoffwissenschaften, University of Erlangen-Nürnberg, Erlangen D-91058, Germany
Petr Král
Affiliation:
Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Brno CZ-61662, Czech Republic
Jiri Dvořák
Affiliation:
Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Brno CZ-61662, Czech Republic
Martin Petrenec
Affiliation:
Tescan Orsay Holding a.s., Brno CZ-62300, Czech Republic
Philip Eisenlohr
Affiliation:
Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824, USA
Vaclav Sklenička
Affiliation:
Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Brno CZ-61662, Czech Republic
*
a) Address all correspondence to this author. e-mail: wolfgang.blum@fau.de

Abstract

Pure Cu was made ultrafine-grained by equal channel angular pressing on route BC at ambient temperatures and deformed in situ in a scanning electron microscope at the elevated temperature of 373 K and at a constant total strain rate of 10−4 s−1. Deformation was repetitively stopped to take micrographs of the grain structure on the same area of observation, revealing limited activity of discontinuous dynamic recrystallization. During the stops of deformation, the flow stress was relaxing. The relaxation of stress as function of time was used to determine the rate of inelastic deformation as a function of stress, from which the activation volume ${V^ * }$ of the thermally activated flow was derived. It is found that the normalized values of ${V^ * }$ were lying in the same order generally found for coarse-grained pure materials. This seems to be in conflict with the literature. However, the conflict is resolved by noting that the literature results refer to quasistationary deformation with the concurrent dynamic recovery in contrast to the present results obtained at a virtually constant microstructure. The interpretation of the two kinds of activation volumes for thermally activated flow is discussed.

Figure 0

FIG. 1. Stress–strain curve of in situ test at ${\dot \varepsilon _{{\rm{tot,0}}}} \approx 9 \times {10^{ - 5}}\;{{\rm{s}}^{ - 1}}$ with intermediate stops i = 1, …, 10, where σ is relaxing; gray: in situ tests at 573 K with (solid) and without (dashed) intermediate stops.7

Figure 1

FIG. 2. Grain structure (OIM) of 8Cu (a) after ECAP and (b) at the end of stress relaxation i = 7, where the dynamically coarsened grains are seen.

Figure 2

FIG. 3. Schematic of stress relaxation (thick arrow) at a constant total strain rate ${\dot \varepsilon _{{\rm{tot}}}}$ starting from σ = σrel,0: (a) stress–strain curve and (b) ${\dot \varepsilon _{{\rm{inel}}}} - \sigma$ at an exactly constant microstructure (including internal stresses) and in the presence of dynamic recovery.

Figure 3

FIG. 4. Relaxation rate $\dot F \propto {\dot \varepsilon _{{\rm{inel}}}}$ of tensile force F as function of stress σ derived in interruptions i of in situ test of Fig. 1 plotted versus stress σ; dotted line: stress dependence of the qs strain rate at ${\dot \varepsilon _{{\rm{inel}}}} \approx {10^{ - 4}}\;{{\rm{s}}^{ - 1}}$; upper abscissa scale: stress normalized by shear modulus G = 40.9 GPa of Cu at 373 K.8

Figure 4

FIG. 5. Inelastic strain rate versus Rσ in stress relaxations i normalized by the starting values (σrel,0, ${\dot \varepsilon _{{\rm{inel,0}}}}$); dashed line shows average slope at Rσ = 1 for i ≤ 7.

Figure 5

FIG. 6. Activation volume ${V^ * }$ in units of b3 at 373 K derived from slopes of curves in Fig. 5 at σ = σrel,0 as a function of normalized stress; with data from σ-relaxation at 573 K7; the data from Ref. 27 were calculated from the qs data of UFG Cu at 373 K plotted in Fig. 7; the dashed lines represent the master curve of ${V^ * }$ as a function of thermal shear stress component of Armstrong et al.25 if the thermal shear stress component equals σ/M (upper dashed line) and (1/3) σ/M (lower dashed line).

Figure 6

FIG. 7. Normalized ${\dot \varepsilon _{{\rm{inel}}}} - \sigma$ diagram for in stress relaxation i = 7 (black) in comparison to ${\dot \varepsilon _{{\rm{gl}}}}$ and ${\dot \varepsilon _{{\rm{rec}}}}$ at a constant structure for three stress concentration factors kh (see text).

Figure 7

FIG. 8. qs strength of nanostructured Cu derived from rate change tests reported in Ref. 27; left ordinate: T-normalized strain rate ${\dot \varepsilon _{298}} \equiv \dot \varepsilon \left( T \right)\exp \left[ { - \left( {Q{\rm{/}}R} \right)\left( {{T^{ - 1}} - T_0^{ - 1}} \right)} \right]$, T0 = 298 K, Q = 70 kJ/mol, right ordinate: strain rate at 373 K.