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Fabrication of flexible pressure sensors with microstructured polydimethylsiloxane dielectrics using the breath figures method

Published online by Cambridge University Press:  12 November 2015

Sophie Miller
Affiliation:
Chemical Engineering, Stanford University, Stanford, CA 94305, USA
Zhenan Bao*
Affiliation:
Chemical Engineering, Stanford University, Stanford, CA 94305, USA
*
a) Address all correspondence to this author. e-mail: zbao@stanford.edu

Abstract

Flexible touch sensors with high sensitivity show promise in biomedical diagnostics and for artificial “electronic skin” for robotics or prosthetic devices. For “electronic skin” applications, there exists a need for low-cost, scalable methods for producing pixels that sense both medium (10–100 kPa) and low pressures (<10 kPa). Here, the “breath figures” (BFs) method, a simple, self-assembly-based method for producing honeycomb-structured porous polymer films, was used to prepare pattern compressible, and microstructured dielectric layers for capacitive pressure sensors. Porous polystyrene BFs films served as molds for structuring polydimethylsiloxane dielectrics. Pressure sensing devices containing the BFs-molded dielectrics consistently gave pressure response with little hysteresis, high sensitivities at lower applied pressures, and improved sensitivity at higher pressures. Analysis of microstructure geometries and pressure sensor performance suggests that structures with higher aspect ratios (height-to-width) produce less hysteresis, and that less uniform, more polydisperse structures yield a more linear pressure response.

Information

Type
Article
Copyright
Copyright © Materials Research Society 2015 
Figure 0

FIG. 1. Schematic depiction of the pressure sensor fabrication process using BFs to microstructure the dielectric. (a) Mechanism of BFs formation. (1) Evaporating solvent from polymer solution cools humid air above its surface, which (2) causes water droplets to condense. (3) The droplets nucleate on the surface and grow, forming ordered hexagonal arrays that, (4) upon complete evaporation, leave honeycomb structured pores in the remaining polymer film. (Adapted from Ref. 19.) (b) Pressure sensor fabrication. BFs films were used as molds to microstructure PDMS films for use as dielectric layers in capacitive pressure sensors with flexible ITO/PET electrodes. Shown below are SEM images of a porous PS BFs film and of molded microstructured PDMS, and pressure–response curves of a representative pressure sensor.

Figure 1

FIG. 2. BFs chamber set-up for formation of BFs under static conditions. (A) Hot plate, (B) dry N2 flow into the bubbler, (C) bubbler with water submerged in beaker containing warm water, (D) humid N2 flow out of the bubbler and into the chamber, (E) acrylic chamber for BFs formation, equipped with a sliding door for sample insertion and removal, (F) septum for applying solution to the substrate with a needle, (G) silicon substrate on which the BFs film is formed in the chamber, (H) humidity probe and meter, (I) outlet for the humid air from chamber.

Figure 2

FIG. 3. BFs films and their PDMS replicas. (a) Optical microscopy image of the PS BFs film cast from solution containing 0.1% w/v DBSA, sodium salt (500×). (b) Optical microscopy image of the PDMS film molded from the PS film shown in (a) (500×). (c) Top-view SEM image of the BFs film cast from 15 mg/mL PS in chloroform with 0.1% w/v DBSA (1000×). (d) Top-view SEM image of PDMS molded from the PS film cast under the same conditions as in (c) (1000×). (e) Cross-sectional SEM image of the same film as (c) (10,000×). (f) Cross-sectional SEM image of the same PDMS film as (d) (12,000×).

Figure 3

FIG. 4. Pressure–response curves of sensors with microstructured PDMS dielectrics. Four capacitive pressure sensors containing different microstructured PDMS dielectric films, shown in the inlaid images (500× magnification), were each tested over five cycles, with results for the latter four shown. The pressure sensors are arranged from most linear to least linear, with sensitivity losses of 86% (a), 90% (b), 90% (c), and 99% (d) over the entire 100 kPa range, and from least to greatest amount of hysteresis in the pressure response (see Table I for numerical values). Sensitivities in the low-pressure (<20 kPa) and medium-pressure (>20 kPa) ranges are shown in the graph, and are equal to the slope of the relative capacitance versus pressure curve.

Figure 4

TABLE I. Sensitivities in the medium-pressure range (10–100 kPa, left hand side) and low-pressure range (below 10 kPa, with sensitivities below and above 2 kPa shown, right hand side) for a control pressure sensor (unstructured PDMS dielectric), a sensor with a pyramidal microstructured dielectric (from Ref. 13), and for the four pressure sensors in Fig. 4, presented in order of increased losses in sensitivity and increased hysteresis over the entire 100 kPa range. Sensitivities are calculated from the slope of the pressure–response curve during application of pressure for one of the four cycles. The percent decrease in sensitivity in each pressure range is also given. This value was not calculated for the unstructured PDMS sensor since the sensitivity quickly achieved a constant value over the entire range of 0–7 kPa. Hysteresis is calculated by determining the greatest difference in pressure, or separation, observed between the pressure application and release curves.

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