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Graphene-based electronic biosensors

Published online by Cambridge University Press:  04 May 2017

Shun Mao*
Affiliation:
State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, Shanghai 200092, China
Junhong Chen*
Affiliation:
Department of Mechanical Engineering, Department of Materials Science and Engineering, University of Wisconsin-Milwaukee, Milwaukee, WI 53211, USA
*
a) Address all correspondence to these authors. e-mail: shunmao@tongji.edu.cn
b) e-mail: jhchen@uwm.edu

Abstract

As an atomic-thick layer material, graphene has a large specific surface area, high electron mobility, and high sensitivity to electronic perturbations from the binding of molecules, all of which are attractive properties for developing electronic sensing devices. This article focuses on graphene-based electronic sensors [field effect transistor (FET) sensors] for detecting biomolecules, including DNA, protein, and bacteria, among others. This article will cover three morphologies of graphene materials in biosensing applications: graphene nanosheet, graphene nanoribbon, and vertically-aligned graphene. The unique structure and electronic properties of graphene enable the FET sensor for the low concentration and rapid detection of biomolecules, thereby addressing the limitations of conventional optical sensing technologies such as ELISA, Western Blot, and electrochemical method. The advantages of graphene-based sensing technology are highlighted and recent progress on graphene-based electronic sensors for detecting biomolecules is reviewed and discussed.

Information

Type
Invited Reviews
Copyright
Copyright © Materials Research Society 2017 
Figure 0

FIG. 1. Schematics of graphene nanosheet, GNR, and vertically aligned graphene structures.

Figure 1

FIG. 2. (a) The current–voltage (I–V) curves of the GO and GA devices. The insets show the device with GO/GA between gold electrodes and a schematic of the GO and GA’s chemical structure. (b) FET curves of GO and GA show they are p-type semiconductors. The top inset shows the post-deposited gold electrodes on a GO sheet. (c) The conductivity of the p-type GA device increases upon attachment of a single bacterial cell on the surface of GA (inset 1). LIVE/DEAD confocal microscopy test on the bacteria deposited on GA (insets 2–4). (d) DNA transistor: ss-DNA tethering on GO increases the conductivity of the device. Inset shows a G-DNA(ds) sheet with wrinkles and folds clearly visible. Reproduced with permission.31 Copyright 2008, American Chemical Society.

Figure 2

FIG. 3. (a) Schematic illustration of the graphene device operated by liquid gating. Middle is an optical microscopy image of the graphene films. Bottom shows the DNA sequences used in the experiments. Transfer characteristics for the graphene transistors before adding DNA, after immobilization with probe DNA, and after reaction with (b) complementary or (c) one-base mismatched DNA molecules with the concentration ranging from 0.01 to 500 nM. Reproduced with permission.32 Copyright 2010, John Wiley & Sons, Inc.

Figure 3

FIG. 4. (a) Schematic of a TRGO FET. Anti-IgG is anchored to the TRGO sheet surface with Au NPs and functions as a specific recognition group for the IgG binding. (b) Evolution of drain–source voltage dependence of the drain current Id when the TRGO FET device is treated with Au NP–anti-IgG conjugates, BB, and IgG (2 μg/mL). Reproduced with permission.48 Copyright 2010, John Wiley & Sons, Inc.

Figure 4

FIG. 5. (a) Schematic illustration of GOD-functionalized graphene FET. (b) Current responses to the addition of glucose at various concentrations. The upper inset shows that GOD-free graphene FET is not responsive to 10 mM glucose. The lower inset shows the response curve of the graphene FET to glucose fitted by an exponential function. Reproduced with permission.54 Copyright 2010, The Royal Society of Chemistry.

Figure 5

FIG. 6. (a) Microscopic image of graphene FET after EBL edge patterning (left); AFM image to show GNRs (right). (b) Drain-source current density Ids (current was normalized to the width of the graphene channel) as a function of the top gate potential Vg in different pH buffer solutions for FET made of 100 nm-wide GNRs. (c) Dirac point shift in response to the different pH. (d) Histogram of sensitivity for the FETs with pristine graphene and graphene ribbons of various widths, pH response of different devices (mV/pH). (e) Average pH response with different edge-to-surface-area ratio. Reproduced with permission.27 Copyright 2013, American Chemical Society.

Figure 6

FIG. 7. (a) Schematic illustration of the rGONR thin-film network device configured as a liquid-gated FET with phosphate buffer saline solution as the electrolyte. (b) Id–Vg curve of a typical rGONR FET biased at Vd = 0.5 V. The inset shows the Id–Vg curve at Vg = 0 V for the same device. (c) Real-time recording of the Id of a typical rGONR thin-film device in PBS, at Vd = 0.5 V and Vg = 0 V. The inset shows the molecular structure of ATP. (d) The current response versus ATP concentration (n = 3 devices; the error bars indicate the standard deviation). Reproduced with permission.26 Copyright 2011, The Royal Society of Chemistry.

Figure 7

FIG. 8. (a) SEM image of VG network between electrode fingers after deposition with Au NP–antibody conjugates. (b) Magnified SEM image of VG network deposited with Au NP–antibody conjugates. (c) Sensor conductivity changes with probe antibody labeling and analyte protein detection. Inset is the FET transport characteristic of the VG. (d) Dynamic responses of the VG sensor exposed to different concentrations of IgG with (top) and without (bottom) probe proteins. Reprinted with permission.67 Copyright 2013 Macmillan Publishers Limited.

Figure 8

TABLE I. Graphene nanosheet, GNR, and VG FET biosensors. I–V represents for drain–source current and drain–source voltage measurement, and FET represents for transistor (Dirac point shift) measurement.