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Patterning of colloidal droplet deposits on soft materials

Published online by Cambridge University Press:  27 November 2020

Julia Gerber
Affiliation:
Laboratory of Thermodynamics in Emerging Technologies, Department of Mechanical and Process Engineering, ETH Zurich, Sonneggstrasse 3, CH-8092 Zurich, Switzerland
Thomas M. Schutzius
Affiliation:
Laboratory of Thermodynamics in Emerging Technologies, Department of Mechanical and Process Engineering, ETH Zurich, Sonneggstrasse 3, CH-8092 Zurich, Switzerland
Dimos Poulikakos*
Affiliation:
Laboratory of Thermodynamics in Emerging Technologies, Department of Mechanical and Process Engineering, ETH Zurich, Sonneggstrasse 3, CH-8092 Zurich, Switzerland
*
†Email address for correspondence: dpoulikakos@ethz.ch

Abstract

The ‘coffee stain ring’ is a particle deposit, that forms naturally, when the liquid of a suspension drop evaporates, leaving the particles at the edge of the deposit. Although observed in coffee cups in everyday life, such deposits appear in a wide range of liquid, particle and surface combinations and have attracted vivid research attention. Previous studies focused on the fluidics of evaporating suspension droplets on rigid materials, where the ring formation was shown to occur for pinned contact lines, and possible suppression of the coffee stain effect with surfactants, or other externally driven means, was investigated. Here, we show that, on soft materials, we can control the topography of the deposit on demand – promoting or suppressing the coffee ring effect – by simply changing the environmental humidity, regulating the evaporative flux. We perform particle tracking of droplets drying on soft substrates at varied environmental conditions and show with experimental observations and theoretical analysis that, at an expedited contact line velocity, particles are advected towards the receding contact line. We relate this advection to the viscous dissipation within the soft solid, retarding the contact line motion. The coffee ring formation in the presence of a receding contact line and its control by the environmental humidity, bring a new perspective to the conditions of the manifestation of this frequent deposit topography. We demonstrate the importance of our findings during the printing of a colloidal line, showing the ability to trigger line bifurcation on soft substrates by regulating the evaporative flux, introducing another degree of controllability for contact printing.

Information

Type
JFM Papers
Copyright
© The Author(s), 2020. Published by Cambridge University Press
Figure 0

Figure 1.Wetting and drying of colloidal droplets on thick (compliant) and very thin (rigid) silicone coatings on glass substrates under varying humidity conditions. We deposited $1\ \mathrm {\mu } \textrm {l}$ droplets from a 0.01 w/v% particle dispersion in water (particle radius: $a = 0.92\ \mathrm {\mu }\textrm {m}$). (a) Side view image sequence showing a colloidal droplet drying on a soft silicone coating (relative humidity: $rh = 0.5\,\%$), also defining the droplet contact radius, $R$, and contact angle $\theta ^*$. Micrographs showing the final dry particle deposits from colloidal droplets drying on (b), compliant ($rh = 0\,\%$), (c), compliant ($rh = 90\,\%$), (d), rigid ($rh = 0\,\%$) and (e), rigid ($rh = 84\,\%$) silicone coatings. Also shown in (b) is the outer diameter of the final deposit, $d_o$, and the inner effective diameter of the final deposit, $d_{{i,eff}}$. Plots of (f) $d_o$ and (g) the ratio of $d_{{i,eff}}$ to $d_o$ for compliant and rigid substrates in high ($rh = 87.6 \pm 2.8\,\%$) and low $rh$ conditions ($rh = 15.0 \pm 12.1\,\%$). The experiments in (f,g) were conducted at least $N = 6$ times for each of the cases. Scale bars: (a), $0.5$ and (b–e), $50\ \mathrm {\mu }\textrm {m}$.

Figure 1

Figure 2.Contact angle and contact line dynamics of suspension droplets drying on rigid (black) and compliant (blue) silicone substrates. We used droplets consisting of a 0.01 % w/v suspension ($a = 0.92\ \mathrm {\mu } \textrm {m}$) in water on a layer of Silicone CY 52–276, $\textrm {A}\,{:}\,\textrm {B} = 9\,{:}\,10$. Measured apparent contact angle versus time, $t$, at (a), high humidity ($rh = 87.6 \pm 1.4\,\%$) and, (b), low humidity environment ($rh = 13.0 \pm 2.9\,\%$). Contact radius, $R$, versus time, $t$, at (c) high humidity ($rh = 87.6 \pm 1.4\,\%$) and (d) low humidity ($rh = 13.0 \pm 2.9\,\%$). The plots in (a–d) represent at least 3 individual experiments and the lines represent a fit of a Fourier series with four terms to the data. Receding contact line velocities, $-\textrm {d}R/\textrm {d}t$, in (e), high humidity ($rh = 87.6 \pm 1.4\,\%$) and (f) low humidity ($rh = 13.0 \pm 2.9\,\%$), which are the derivatives of the fitted Fourier series in (c,d), respectively. The dashed line represents the threshold of the substrate relaxation velocity, $\gamma _{{LV}}/(E\tau ) = 0.98\ \mathrm {\mu } \textrm {m}$.

Figure 2

Figure 3.Flow within evaporating colloidal droplets on a thick (compliant) silicone coating on a glass substrate under varying humidity conditions. (a) Tracked particles during evaporation of a colloidal droplet near the solid–liquid interface ($\sim z = {0}\ \mathrm {\mu }\textrm {m}$) in a dry environment ($rh = 33.2\,\%$) on a compliant material at the intervals of $t = -301\ \textrm {s}$ to $t = -271\ \textrm {s}$, $t = -95\ \textrm {s}$ to $t = -65\ \textrm {s}$ and $t = -50\ \textrm {s}$ to $t = -20\ \textrm {s}$. (b) Diagram of time, $t$, versus distance from contact line, $d_{{CL}}$, versus Péclet number, $Pe$, for colloidal droplets evaporating on a compliant material in low $rh$ conditions ($rh = 33.2 \pm 0.9\,\%$) (see § 2.3). (c) Tracked particles during evaporation of a colloidal droplet near the solid–liquid interface ($\sim z = 0\ \mathrm {\mu } \textrm {m}$) in a humid environment ($rh = 83.0\,\%$) on a compliant material at the same time intervals as in (a). (d) Diagram of $t$ versus $d_{{CL}}$ versus $Pe$ for colloidal droplets evaporating on a compliant material in high $rh$ conditions ($rh = 85.2 \pm 2.2\,\%$) (see § 2.3). In (b,d) the values of $Pe$ have been interpolated from $N = 3$ individual experiments each. Positive values of $Pe$ signify motion towards the contact line. Negative values of $Pe$ signify motion towards the droplet centre. Scale bars: (a), (c) $30\ \mathrm {\mu } \textrm {m}$.

Figure 3

Figure 4.Colloidal transport and assembly at the liquid–vapour interface during droplet evaporation in an undersaturated environment on a compliant substrate. (a) Locations of particles at the edge of the droplet ($-10\ \mathrm {\mu }\textrm {m} < d_{{CL}} < {80}\ \mathrm {\mu }\textrm {m}$ and $-5\ \mathrm {\mu }\textrm {m} < z < 20\ \mathrm {\mu } \textrm {m}$) at various time steps during colloidal droplet evaporation on a compliant substrate at low $rh$ conditions ($rh = 13.8\,\%$), also showing the macroscopically measured contact angle; $z = 0\ \mathrm {\mu }\textrm {m}$ is at the height of the contact line (tip of the wetting ridge). Each black dot represents the location of a detected particle. See appendix C for details on the detecting method. (b) Image showing the particles assembling at the droplet edge in a low humidity environment ($t = -60\ \textrm {s}$, $rh = 19.0\,\%$, at $z = 0\ \mathrm {\mu }\textrm {m}$). (c) Image showing the particles assembling at the liquid–vapour interface in a low humidity environment ($t = -60\ \textrm {s}$, $rh = 24.5\,\%$, at $z = 100\ \mathrm {\mu }\textrm {m}$). (d) Image showing the hexagonally ordered aggregates on the liquid–vapour interface in a low humidity environment ($t = -5.8\ \textrm {s}$, $rh = 13.8\,\%$). (e) Image showing the particles at the liquid–vapour interface in a high humidity environment ($t = -425\ \textrm {s}$, $rh = 89\,\%$, at $z = 100\ \mathrm {\mu }\textrm {m}$). For (a–e) we used a $1\ \mathrm {\mu }\textrm {l}$ drop of 0.01 w/v% of a dispersion of particles with $a = 0.92\ \mathrm {\mu }\textrm {m}$ on a soft silicone substrate ($h = 35\ \mathrm {\mu }\textrm {m}$). (f) Normalized number of particles at the liquid–vapour interface, $N_A/N_p$, vs. time, $t$, and normalized total binary collision events, $N_{Z,b}/N_p$, vs. time, $t$, during colloidal droplet evaporation on a compliant substrate at low $rh$ conditions. We have to note that the droplet was placed at $t_0$, which was before $t = -500\ \textrm {s}$, but we disregarded earlier times in this plot. Scale bars: (b, c) $200$, (d) $50$ and (e) $200\ \mathrm {\mu } \textrm {m}$.

Figure 4

Figure 5.Process of ring formation during colloidal droplet evaporation from a compliant material under low $rh$ conditions. (a–e) Schematics of the evaporation process. (f–i) Snapshots of the process steps presented in (b–e) showing the motion of the particles and aggregates at the liquid–vapour interface. Initial and final locations of particles are marked with orange and red spots, respectively. The location of the liquid–vapour interface at height $z$ is shown as a blue dashed line. The time intervals are (f) $t = -366\ \textrm {s}$ to $t = -349\ \textrm {s}$, during this stage particles in the bulk are subjected to a weak outward flow thus being captured by the descending liquid–vapour interface, (g) $t = -105\ \textrm {s}$ to $t = -87\ \textrm {s}$, during this stage the particles at the liquid–vapour interface have partially aggregated, (h), $t = - 29\ \textrm {s}$ to $t = -24\ \textrm {s}$, during this stage the particles and aggregates at the liquid–vapour interface are experiencing the outward replenishing flow and are dragged towards the contact line and (i) $t = - 3.6\ \textrm {s}$ to $t = - 3.0\ \textrm {s}$, during this stage we observe contact line pinning, also particles at the liquid–vapour interface form a particle scaffold ring and are subjected to contraction, also strong outward flows lead to unordered deposition of particles in the underlying layer. Images in (f–h) were taken at a focus of a height of approximately $z \sim 20\ \mathrm {\mu }\textrm {m}$, the image in (i) was focused at $z \sim 0\ \mathrm {\mu }\textrm {m}$. Scale bars: (f–i) $25\ \mathrm {\mu }\textrm {m}$.

Figure 5

Figure 6.Compliant materials enable shape changes of footprints in a printing configuration, from a bifurcated to a single line. (a) Experimental set-up used for contact printing experiments. (b) Footprint resulting from straight stage motion under decreasing sample temperature, $T_s$, and flow rate, $Q$, profiles, dispersion of 0.1 w/v% of particles ($a = 0.92\ \mathrm {\mu }\textrm {m}$). (c) Plot of $rh$ vs. $t$ and $T$ vs. $t$ during the printing experiment shown in (b). (d) Plot of $Q$ vs. $t$ during the printing experiment in (b). Scale bar: (b) 2 mm.

Figure 6

Figure 7.Characterization of sample with thin silicone elastomer layer. (a) Scanning electron micrographs of cleaved samples, silicone elastomer layer on silicon wafer. Scale bar $1\ \mathrm {\mu }\textrm {m}$. (b) Indentation tests of glass (in grey), a thin silicone layer with a thickness ${\approx }72\ \textrm {nm}$ on glass (in orange) and a thick silicone layer with a thickness ${\approx }35\ \mathrm {\mu }\textrm {m}$ on glass (in red). The two force vs. displacement curves of the glass and thin silicone layer on glass overlap (within the standard deviations), showing that the silicone layer does not add significant compliance to the glass substrate.

Figure 7

Figure 8.Explanation for determination of $A_{{i,eff}}$. The image on the left is a picture of the deposit, including a scale bar. The image on the right has been ‘thresholded’, and the area within the deposit that does not contain any particles is then black and can be measured. Scale bar: $50\ \mathrm {\mu }\textrm {m}$.

Figure 8

Figure 9.Working principle of detection of the three-dimensional locations of particles. The focal plane was scanned through $z$, obtaining a stack of images with ${\rm \Delta} z=2\ \mathrm {\mu }\textrm {m}$. Each image of the stack was analysed by an algorithm searching for circular objects. Not all images of the stack are shown here. The white dashed line represents the location of the contact line. The red circles mark the detected particles at each height $z$. Scale bar: $10\ \mathrm {\mu }\textrm {m}$.

Gerber et al. supplementary movie 1

Movie showing the contact line motion during colloidal droplet drying on a compliant silicone substrate (E = 12.6 kPa), at T = 22°C and rh = 0%

Download Gerber et al. supplementary movie 1(Video)
Video 48.1 MB

Gerber et al. supplementary movie 2

Movie showing particle tracking during colloidal droplet drying on a compliant substrate in low rh conditions (E = 12.6 kPa, T = 23.7°C and rh = 33.8%).

Download Gerber et al. supplementary movie 2(Video)
Video 39.6 MB

Gerber et al. supplementary movie 3

Movie showing particle tracking during colloidal droplet drying on a compliant substrate in high rh conditions (E = 12.6 kPa, T = 24.7°C and rh = 83.0%).

Download Gerber et al. supplementary movie 3(Video)
Video 37.2 MB