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Substrate-integrated waveguide cross-coupled filters with mixed electric and magnetic coupling structure

Published online by Cambridge University Press:  08 June 2018

Amit Ranjan Azad*
Affiliation:
Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur-721302, West Bengal, India
Dharmendra Kumar Jhariya
Affiliation:
Department of Aerospace Engineering, Indian Institute of Technology Kharagpur, Kharagpur-721302, West Bengal, India
Akhilesh Mohan
Affiliation:
Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur-721302, West Bengal, India
*
Author for correspondence: Amit Ranjan Azad, E-mail: amitranjanazad@gmail.com
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Abstract

This paper presents a substrate-integrated waveguide (SIW) mixed electric and magnetic coupling structure implemented on a single-layer substrate to create finite transmission zeros (TZs), which can be used to design microwave filters with higher frequency selectivity. Mixed coupling is realized by three slot-lines on the top metal plane combined with an iris-window between two adjacent SIW cavities. The electric and magnetic coupling can be separately controlled by adjusting the dimensions of the slot-lines and the width of the iris-window, and a controllable TZ below or above the passband can be produced. Furthermore, a detailed analysis of the mixed coupling structure is presented. To demonstrate the validity of the proposed structure, third- and fourth-order cross-coupled generalized Chebyshev bandpass filters are designed and fabricated using the standard printed circuit board process. The experimental results are in good agreement with the simulation results. The filters exhibit simple structure and good frequency selectivity.

Information

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2018 
Figure 0

Fig. 1. Proposed mixed electric and magnetic coupling structure.

Figure 1

Fig. 2. E-field of the proposed mixed coupling structure with dominant electric coupling: (a) first resonant mode; (b) second resonant mode.

Figure 2

Fig. 3. E-field of the proposed mixed coupling structure with dominant magnetic coupling: (a) first resonant mode; (b) second resonant mode.

Figure 3

Fig. 4. Coupling coefficient of the proposed mixed coupling structure against: (a) l; (b) w; (c) s; (d) g.

Figure 4

Fig. 5. Configuration of the second-order filter with mixed coupling (the initial values of the parameters in the simulation are as follows: a = 14 mm, b = 14.5 mm, wfeed = 2.43 mm, wgap = 5 mm, and lfeed = 1 mm).

Figure 5

Fig. 6. Equivalent circuit of the second-order filter with mixed coupling.

Figure 6

Fig. 7. Simulated S21-parameters of the second-order filter against: (a) l (w = 0.4 mm, s = 0.4 mm, g = 6.5 mm); (b) w (l = 15 mm, s = 0.4 mm, g = 6.5 mm); (c) s (l = 15 mm, w = 0.25 mm, g = 6.5 mm); (d) g (l = 15 mm, w = 0.25 mm, s = 0.35 mm). The location of the TZ is denoted by fm in all cases.

Figure 7

Fig. 8. Calculated external quality factor Qe versus lfeed and wgap.

Figure 8

Fig. 9. Third-order cross-coupled bandpass filter: (a) configuration; (b) coupling topology.

Figure 9

Fig. 10. Frequency response of the third-order cross-coupled bandpass filter: (a) synthesized; (b) simulated and measured.

Figure 10

Fig. 11. Fourth-order cross-coupled bandpass filter: (a) configuration; (b) coupling topology.

Figure 11

Fig. 12. Frequency response of the fourth-order cross-coupled bandpass filter: (a) synthesized; (b) simulated and measured.