Hostname: page-component-74656f9884-j7cmm Total loading time: 0 Render date: 2026-11-09T00:21:07.411Z Has data issue: false hasContentIssue false

Stability of different plasma sheaths near a dielectric wall with secondary electron emission

Published online by Cambridge University Press:  04 December 2019

Shaowei Qing*
Affiliation:
Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Chongqing University, Ministry of Education, Chongqing400044, China Institute of Energy and Power Engineering, Chongqing University, Chongqing400044, China
Jianguo Wei
Affiliation:
Shanxi Key Laboratory of Plasma Physics and Applied Technology, Xi’an710100, China Academy of Aerospace Propulsion Technology, Xi’an710100, China
Wen Chen
Affiliation:
Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Chongqing University, Ministry of Education, Chongqing400044, China Institute of Energy and Power Engineering, Chongqing University, Chongqing400044, China
Shengli Tang
Affiliation:
Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Chongqing University, Ministry of Education, Chongqing400044, China Institute of Energy and Power Engineering, Chongqing University, Chongqing400044, China
Xiaogang Wang
Affiliation:
School of Physics, Harbin Institute of Technology, Harbin150001, China
*
†Email address for correspondence: qshaowei@cqu.edu.cn
Rights & Permissions [Opens in a new window]

Abstract

The linear theory stability of different collisionless plasma sheath structures, including the classic sheath, inverse sheath and space-charge limited (SCL) sheath, is investigated as a typical eigenvalue problem. The three background plasma sheaths formed between a Maxwellian plasma source and a dielectric wall with a fully self-consistent secondary electron emission condition are solved by recent developed 1D3V (one-dimensional space and three-dimensional velocities), steady-state, collisionless kinetic sheath model, within a wide range of Maxwellian plasma electron temperature $T_{e}$. Then, the eigenvalue equations of sheath plasma fluctuations through the three sheaths are numerically solved, and the corresponding damping and growth rates $\unicode[STIX]{x1D6FE}$ are found: (i) under the classic sheath structure (i.e. $T_{e}<T_{ec}$ (the first threshold)), there are three damping solutions (i.e. $\unicode[STIX]{x1D6FE}_{1}$, $\unicode[STIX]{x1D6FE}_{2}$ and $\unicode[STIX]{x1D6FE}_{3}$, $0>\unicode[STIX]{x1D6FE}_{1}>\unicode[STIX]{x1D6FE}_{2}>\unicode[STIX]{x1D6FE}_{3}$) for most cases, but there is only one growth-rate solution $\unicode[STIX]{x1D6FE}$ when $T_{e}\rightarrow T_{ec}$ due to the inhomogeneity of sheath being very weak; (ii) under the inverse sheath structure, which arises when $T_{e}>T_{ec}$, there are no background ions in the sheath so that the fluctuations are stable; (iii) under the SCL sheath conditions (i.e. $T_{e}\geqslant T_{e\text{SCL}}$, the second threshold), the obvious ion streaming through the sheath region again emerges and the three damping solutions are again found.

Information

Type
Research Article
Copyright
© Cambridge University Press 2019 
Figure 0

Figure 1. Schematic potential distribution and SEE process in different sheaths near a floating wall: (a) classic sheath configuration with single-step SEE process, and (b) SCL and inverse sheath configurations with multistep SEE process, the dashed line means that the flux of reflected primary electrons only exists in the SCL sheath regime. $x=0$ and $x=L$ are sheath edge and wall surface respectively, $\unicode[STIX]{x1D719}_{w}$ and $\unicode[STIX]{x1D719}_{\text{vc}}$ are the electric potentials at the wall and virtual cathode (i.e. $x=x_{\text{vc}}$) respectively.

Figure 1

Figure 2. The steady-state distributions of (a) electric potential $\unicode[STIX]{x1D719}$, (b) total electron density $n_{e}$ and (c) ion density $n_{i}$ and (d) ion velocity $v_{i}$ in the classic sheath, for the cases of a Xe+ plasma and a H+ plasma, $T_{e}=1$, 15, 20, 20.847 eV.

Figure 2

Figure 3. The steady-state distributions of electric potential $\unicode[STIX]{x1D719}$, electron density $n_{e}$ and ion density $n_{i}$ and ion velocity $v_{i}$ in the inverse sheath for the cases of $T_{e}=25$, 60, 100 eV.

Figure 3

Figure 4. The steady-state distributions of electric potential $\unicode[STIX]{x1D719}$, electron density $n_{e}$ and ion density $n_{i}$ and ion velocity $v_{i}$ in the SCL sheath for the cases of a Xe+ plasma, Kr+ plasma, Ar+ plasma and H+ plasma when $T_{e}=60$  eV.

Figure 4

Figure 5. The three damping solutions, namely $\unicode[STIX]{x1D6FE}_{1}$, $\unicode[STIX]{x1D6FE}_{2}$ and $\unicode[STIX]{x1D6FE}_{3}$, under the classic sheath regime versus the Maxwellian plasma electron temperature $T_{e}$ for the cases of (a) Xe+ plasma, (b) H+ plasma. Note that there is an instability solution for a H+ plasma when $T_{e}=20$  eV.

Figure 5

Figure 6. The eigenfunction distributions of (a) $\tilde{\unicode[STIX]{x1D6F7}}$, and (b) ${\tilde{N}}_{i}$, $\tilde{V}_{i}$, ${\tilde{N}}_{e}$ and $\tilde{V}_{e}$ under the classic sheath regime, with the damping solution 1, i.e. $\unicode[STIX]{x1D6FE}_{1}=-0.000182402\unicode[STIX]{x1D714}_{\text{pi}}$, for the case of a H+ plasma, $T_{e}=15$  eV.

Figure 6

Figure 7. The eigenfunction distributions of (a) $\tilde{\unicode[STIX]{x1D6F7}}$, and (b) ${\tilde{N}}_{i}$, $\tilde{V}_{i}$, ${\tilde{N}}_{e}$ and $\tilde{V}_{e}$ under the classic sheath regime, with the damping solution 2, i.e. $\unicode[STIX]{x1D6FE}_{2}=-0.004279169\unicode[STIX]{x1D714}_{\text{pi}}$, for the case of a H+ plasma, $T_{e}=15$  eV.

Figure 7

Figure 8. The eigenfunction distributions of (a) $\tilde{\unicode[STIX]{x1D6F7}}$, and (b) ${\tilde{N}}_{i}$, $\tilde{V}_{i}$, ${\tilde{N}}_{e}$ and $\tilde{V}_{e}$ under the classic sheath regime, with the damping solution 3, i.e. $\unicode[STIX]{x1D6FE}_{3}=-0.05785627\unicode[STIX]{x1D714}_{\text{pi}}$, for the case of a H+ plasma, $T_{e}=15$  eV.

Figure 8

Figure 9. The eigenfunction distributions of (a) $\tilde{\unicode[STIX]{x1D6F7}}$, and (b) ${\tilde{N}}_{i}$, $\tilde{V}_{i}$, ${\tilde{N}}_{e}$ and $\tilde{V}_{e}$ under the classic sheath regime, with the growth rate $\unicode[STIX]{x1D6FE}=0.00346\unicode[STIX]{x1D714}_{\text{pi}}$, for the case of a H+ plasma, $T_{e}=20$  eV.

Figure 9

Figure 10. The three damping solutions, namely $\unicode[STIX]{x1D6FE}_{1}$, $\unicode[STIX]{x1D6FE}_{2}$ and $\unicode[STIX]{x1D6FE}_{3}$, under the SCL sheath regime versus the mass ratio $m_{i}/m_{e}$ when $T_{e}=60$  eV.