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Bonding characteristic and electronic property of TiCxN1−x(001)/TiC(001) interface: A first-principles study

Published online by Cambridge University Press:  17 April 2018

Xingwen Fan
Affiliation:
College of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
Song Wang
Affiliation:
College of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
Xianfeng Yang
Affiliation:
College of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
Guoli Ni
Affiliation:
College of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
Jingyi Zhang
Affiliation:
Science and Technology on Advanced Functional Composites Laboratory, Aerospace Research Institute of Materials & Processing Technology, Beijing 100076, China
Da Li*
Affiliation:
College of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
*
a)Address all correspondence to this author. e-mail: hardfacing@home.swjtu.edu.cn

Abstract

The TiCxN1−x(001)/TiC(001) interface was studied by the first-principles method to provide the theoretical basis for developing TiCxN1−x/TiC coatings. The partial density of state (PDOS), charge density, charge density difference, and Mulliken population analysis were utilized to investigate the bonding nature and the electronic characteristic of the TiC0.25N0.75/TiC interface. The corresponding results indicate that the bonding nature at the interface is ionic and covalent characteristics, which also exist in bulk materials. The extreme similarity of PDOS among interfacial C, N, and Ti atoms and their bulk counterparts reveals that the electronic structure transition at the interface is smooth. The results of Mulliken population analysis and plots of charge density and charge density difference demonstrate that the charge increased for C in the TiC side is less than that for N in the TiC0.25N0.75 side, which reveals that the ionic bond in TiC0.25N0.75 is stronger than that in TiC. Therefore, TiC0.25N0.75 coating can be an alternative choice to combine with TiC coating in the actual production process of multilayer coatings.

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Article
Copyright
Copyright © Materials Research Society 2018 
Figure 0

FIG. 1. Crystal structures of (a) TiC, (b) TiC0.25N0.75, (c) TiC0.5N0.5, and (d) TiC0.75N0.25.

Figure 1

TABLE I. Calculated and experimental (Exp.) values of the properties of all structures.

Figure 2

FIG. 2. Total and PDOS for all bulks (a) TiC, (b) TiC0.25N0.75, (c) TiC0.5N0.5, and (d) TiC0.75N0.25. The EF is set to zero.

Figure 3

TABLE II. The test results for surface convergence with different methods. The (A) part is the results for surface energy convergence with respect to slab thickness, and part (B) is the results of the spacing changes after the TiC(001) surface relaxations (the percentage increase or decrease of the layer spacing is presented as Δij).

Figure 4

FIG. 3. Plots of ${E_{{\rm{Ti}}{{\rm{C}}_x}{N_{1 - x}}}}\left( {001} \right)$ with 7 layers of atoms (a) first termination structure of TiC, (b) second termination structure of TiC, (c) first termination structure of TiC0.25N0.75, (d) second termination structure of TiC0.25N0.75, (e) first termination structure of TiC0.5N0.5, (f) second termination structure of TiC0.5N0.5, (g) first termination structure of TiC0.75N0.25, and (h) second termination structure of TiC0.75N0.25.

Figure 5

TABLE III. The adhesion energy, Wad (J/m2), of 12 interface structures after relaxation.

Figure 6

FIG. 4. Plot of the first terminated structure of TiC contacting with second terminated structure of TiC0.25N0.75.

Figure 7

FIG. 5. DOS projected on the selected interface after relaxation. The first layer is closer to the interface. The top figure (a) presents the PDOS of TiC0.25N0.75 layers and the bottom one (b) shows those of TiC layers. The EF is set to zero denoted by a dash line.

Figure 8

FIG. 6. Plots of (a) charge density and (b) charge density difference of the interface along the (010) plane.

Figure 9

TABLE IV. Mulliken charge on representative atoms of the interface.