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Effect of atomic scale plasticity on hydrogen diffusion in iron: Quantum mechanically informed and on-the-fly kinetic Monte Carlo simulations

Published online by Cambridge University Press:  31 January 2011

A. Ramasubramaniam
Affiliation:
Program in Applied and Computational Mathematics, Princeton University, Princeton, New Jersey 08544
M. Itakura
Affiliation:
Center for Computational Science and E-systems, Japan Atomic Energy Agency, Taito-ku, Tokyo 110-0015, Japan
M. Ortiz
Affiliation:
Graduate Aeronautical Laboratories, California Institute of Technology, Pasadena, California 91125
E.A. Carter*
Affiliation:
Department of Mechanical and Aerospace Engineering and Program in Applied and Computational Mathematics, Princeton University, Princeton, New Jersey 08544
*
a)Address all correspondence to this author. e-mail: eac@princeton.edu

Abstract

We present an off-lattice, on-the-fly kinetic Monte Carlo (KMC) model for simulating stress-assisted diffusion and trapping of hydrogen by crystalline defects in iron. Given an embedded atom (EAM) potential as input, energy barriers for diffusion are ascertained on the fly from the local environments of H atoms. To reduce computational cost, on-the-fly calculations are supplemented with precomputed strain-dependent energy barriers in defect-free parts of the crystal. These precomputed barriers, obtained with high-accuracy density functional theory calculations, are used to ascertain the veracity of the EAM barriers and correct them when necessary. Examples of bulk diffusion in crystals containing a screw dipole and vacancies are presented. Effective diffusivities obtained from KMC simulations are found to be in good agreement with theory. Our model provides an avenue for simulating the interaction of hydrogen with cracks, dislocations, grain boundaries, and other lattice defects, over extended time scales, albeit at atomistic length scales.

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Copyright
Copyright © Materials Research Society 2008
Figure 0

TABLE I.Dissolution energy Ed = E(Fe54H) − E(Fe54) − E(H2)/2 (in eV) of hydrogen in the T-site and O-site as a function of lattice strain computed with PAW-DFT-GGA.

Figure 1

FIG. 1Schematic illustration of a bcc lattice (a) showing 4 T-sites and 1 O-site on the front face and (b) an exploded view of the tetrahedra that contain these 4 T-sites. The O-site does not belong to the interior of any tetrahedron and lies instead on the common edge between the 4 tetrahedra.

Figure 2

TABLE II.Energy barrier Eb (meV) and diffusion prefactor D0 (10−7 m2/s) for bulk diffusion of H in α–Fe computed as a function of lattice strain. Energies in parentheses represent barriers without zero-point corrections.

Figure 3

TABLE III.Dissolution energy of H in Fe at the T-site (Ed) and the saddle point (ES) and the energy barrier (Eb) as a function of lattice strain. The relative change in circumradius of the tetrahedron (ΔrT) and the saddle face (ΔrS), which is a measure of the change in volume of the T-site and area of saddle point with applied strain, respectively, is also tabulated. For purposes of comparison, the corresponding values from the EAM potential are listed in parentheses. All DFT energies have been corrected for zero-point vibrations.

Figure 4

FIG. 2Dissolution energy of H in Fe at the T-site (Ed) and the saddle point (ES) as a function of the relative change in circumradius of the tetrahedron (ΔrT) and the saddle face (ΔrS), respectively. The linear fits, which serve as a guide to the eye, indicate that dissolution energies computed from EAM are less sensitive to strain than those from DFT calculations.

Figure 5

FIG. 3Schematic illustration of tetrahedral site (T1). The vertices, in terms of the lattice constant a0, are V1 = a0 (½, −½, ½), V2 = a0 (½, ½, ½), V3 = a0 (0, 0, 1), and V4 = (0, 0, 0). Due to tetragonal symmetry, the dependence of the T-site dissolution energy on strain components ϵ22 and ϵ33 is identical and different from that for ϵ11. The symmetry axis of the face V1V2V3 is denoted by A. The dissolution energy at the saddle point on face V1V2V3 is parameterized as a function of ϵ22 and the strain ϵAA along axis A (see text).

Figure 6

FIG. 4(a) Differential displacement map of a [¯111]/(110) screw dislocation core. The dotted lines are a guide to viewing the threefold symmetry. The solid squares indicate, schematically, the three deepest traps with binding energy of −0.45 eV (after 39). (b) Effective diffusion constant as a function of temperature in the presence of a screw dipole. The squares represent the measured values from KMC simulations. The solid line represents the calculated values from trapping theory with ΔE = −0.45 eV and 3 trapping sites per Burgers vector. The triangles represent the values obtained from a naïve calculation using strain-parameterized diffusion barriers throughout the cell. Clearly, the latter approach produces grossly incorrect diffusion constants thereby illustrating the need for on-the-fly calculations at defects.

Figure 7

FIG. 5Effective diffusion constant as a function of temperature in the presence of vacancy traps (a) for an initially relaxed cell and (b) for an initially unrelaxed cell, in which case there are no stress fields associated with the vacancies. The solid line represents the calculated values from trapping theory with ΔE = −0.59 eV46 and 6 traps per vacancy. The label “otf” refers to the situation where the saddle point energy is computed on the fly. The label “bv” refers to the situation where the saddle point energy is artificially constrained everywhere to the bulk value, in which case the analytical results from trapping theory are expected to hold. Results are displayed for “otf” and “bv” cases with and without blocking of adjacent vacancy trap sites by bound H atoms.

Figure 8

FIG. 6(a) Schematic illustration of 4 neighboring bulk T-sites from which hops to a vacancy binding site can occur. The binding site is displaced by δ = 0.4 Å from the O-site toward the vacancy.14 (b) The saddle point for the hop from a neighboring T-site to the binding site is located on the (shaded) common face between the tetrahedron containing the T-site of interest and the octahedron that contains the binding site.

Figure 9

TABLE IV.Energy barriers from DFT (EAM values in parentheses) for H binding to and unbinding from a vacancy and VH complex, and for H hopping between adjacent vacancy binding sites. For the VH → VH2 case, the second H atom is assumed to hop to the binding site directly opposite the site occupied by the first H atom, i.e., occupancy of adjacent vacancy binding sites is disallowed.

Figure 10

FIG. 7Effective diffusion constant as a function of temperature in the presence of vacancy traps. The simulation cell is fully relaxed prior to the KMC calculation. The simulation uses DFT-based energy barriers for hops to and from vacancies and VH complexes and between vacancy binding sites; EAM is used elsewhere. The trap binding energy is ΔE = −0.69 eV. The solid and dashed lines indicate the analytical results from trapping theory for 600 sites and 350 sites, which are the maximum and minimum number of available traps, respectively (see text). Numerical results are shown for two initial conditions: (1) a random distribution of H atoms (squares) and (2) all VH or VH2 complexes (triangles).