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Characterization of the interfacial strength of SiNx/GaAs film/substrate systems using energy balance in nanoindentation

Published online by Cambridge University Press:  11 November 2013

Hongtao Xie
Affiliation:
School of Mechanical and Mining Engineering, The Faculty of Engineering, Architecture and Information Technology, The University of Queensland, Queensland 4072, Australia
Han Huang*
Affiliation:
School of Mechanical and Mining Engineering, The Faculty of Engineering, Architecture and Information Technology, The University of Queensland, Queensland 4072, Australia
*
a)Address all correspondence to this author. e-mail: han.huang@uq.edu.au

Abstract

The linear elastic recovery measured from the nanoindentation unloading curve of a film/substrate system was used to determine the practical work for delamination using the proposed energy balance method and to estimate the delaminated area using the Hertz contact loaded model. The practical work for delamination was then calculated by dividing the external mechanical work required for generating interfacial crack by the delaminated area. The finite element model simulation demonstrated that the energy method was feasible and the estimation of delamination area using the Hertz model was accurate. The practical works for delamination in the plasma-enhanced chemical vapor deposition SiNx/GaAs film/substrate systems estimated using this method were in the range of 1–2.3 J/m2, which were in reasonably good agreement with those obtained from our another experimental approach.

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Articles
Copyright
Copyright © Materials Research Society 2013 
Figure 0

FIG. 1. Schematic illustration of indentation-induced deformation during loading and unloading and the corresponding P–h curves of systems 1, 2, and 3.

Figure 1

FIG. 2. Determination of the work done for indentation-induced delamination, W1 − W2.

Figure 2

FIG. 3. Illustration of the Hertz contact loaded plate model.

Figure 3

FIG. 4. The FEM indentation model.

Figure 4

FIG. 5. The P–h curves for various cohesive energies of 0 [curve (a), which is equivalent to the interface with a preexisting crack], 0.46 (b), 0.91 (c), 1.37 (d), 1.83 (e), 2.28 (f), 2.74 (g), and 3.20 J/m2 (h).

Figure 5

FIG. 6. (a) The work done by the indenter, W, (b) the elastic energy, U, (c) the plastic energy, Ep, and (d) the true work, J × A, for delamination as a function of indenter displacement. Solid line: the system with an interfacial strength of 2.74 J/m2; dotted line: the precracked system with an interfacial strength of 0 J/m2.

Figure 6

FIG. 7. The P–h curves of (a) the first indentation on a bilayer system with interfacial strength of 2.74 J/m2, i.e., system 1, (b) the secondary indentation on system 1 and (c) the first indentation on a bilayer system with a closed preexisting crack, i.e., system 2. (d) All the curves in (a), (b), and (c) are replotted for comparison.

Figure 7

FIG. 8. (a) The true work for delamination, (b) the crack radius, and (c) the interfacial strength obtained from FEM simulation are plotted as a function of cohesive energy input initially into the model.

Figure 8

FIG. 9. The P–h curves obtained from the FEM simulation under different indentation loads for the system of interfacial energy of 2.74 J/m2.

Figure 9

TABLE I. Specimen and indentation conditions and the calculated values of crack radius and practical work for delamination.

Figure 10

FIG. 10. The subtracted P–h curves for calculating W1 − W2 under three different indentation loads of 100, 150, and 200 mN for the three SiN films (a) dense, (b) compressive, and (c) DL-com.