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Morphological characterization of fullerene and fullerene-free organic photovoltaics by combined real and reciprocal space techniques

Published online by Cambridge University Press:  02 May 2017

Subhrangsu Mukherjee
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Andrew A. Herzing
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Donglin Zhao
Affiliation:
Department of Chemistry and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637, USA
Qinghe Wu
Affiliation:
Department of Chemistry and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637, USA
Luping Yu
Affiliation:
Department of Chemistry and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637, USA
Harald Ade
Affiliation:
Department of Physics and Organic and Carbon Electronics Laboratory, North Carolina State University, Raleigh, North Carolina 27695, USA
Dean M. DeLongchamp
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Lee J. Richter*
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
*
a) Address all correspondence to this author. e-mail: lee.richter@nist.gov

Abstract

Morphology can play a critical role in determining function in organic photovoltaic (OPV) systems. Recently molecular acceptors have showed promise to replace fullerene derivatives as acceptor materials in bulk heterojunction solar cells and have achieved >10% efficiencies in single junction devices. The nearly identical mass/electron densities between the donor (polymer) and acceptor (molecule) materials results in poor material contrast compared to fullerene-based OPVs and therefore morphology characterization using techniques that rely on mass/electron density variations poses a challenge. This inhibits a fundamental understanding of the structure–property relationships for non-fullerene acceptor materials. We demonstrate that low angle annular dark field scanning transmission electron microscopy and resonant soft X-ray scattering form a set of complementary tools that can provide quantitative characterization of fullerene as well as non-fullerene based organic photovoltaic systems.

Information

Type
Invited Articles
Copyright
Copyright © Materials Research Society 2017 
Figure 0

SCHEME 1. Chemical structures of (a) PTB7-Th; (b) PC71BM; (c) α-TPB. α-TPB structure shown is not geometry optimized.

Figure 1

FIG. 1. (a) GISAXS 2-D data; (b) bright field TEM images (scale bar 200 nm) for the samples cast from CB only (no-additive) (left panel) and the optimized CB + 8% v/v DPE additive (8% DPE) (right panel). Inset in (a) shows 1-D scattering profiles from the two samples.

Figure 2

FIG. 2. Schematic of ADF-STEM imaging showing the respective experimental geometries for the low-angle annular dark field (LAADF), high-angle annular dark field (HAADF) and bright field (BF) imaging modes. The collection angles of the detectors are varied by changing the camera length (effective distance between specimen and detector plane).

Figure 3

FIG. 3. (a) Variation of the real (δ) and imaginary (β) parts of the refractive index for PTB7-Th and PC71BM; (b) material contrast between the donor polymer PTB7-Th and PC71BM and vacuum/mass thickness contrasts for PTB7-Th and PC71BM near and across the C K-edge (∼285 eV); see Supplementary Material for details on measurement of δ and β (c) schematic of R-SoXS experiment in transmission geometry with the X-ray beam at normal incidence to the film.

Figure 4

FIG. 4. (a) LAADF-STEM images of PTB7-Th:PC71BM samples cast from CB (no-additive) and CB + DIO (3% DIO) solutions respectively. Scale bar, 500 nm; (b) background corrected power spectral density (PSD) versus q (upper) and q2 weighted77 (PSD*q2 versus q) (lower) 1-D profiles calculated from a fast Fourier transform (FFT) of the LAADF images in (a); (c) integrated PSD*q2 (ISI) over all observed length scales (solid bars) and characteristic size scale (dotted bars) calculated from major peak position in PSD profiles for the no-additive and 3% DIO samples. Intensity and size scale error bar values were estimated from single log-normal peak fits to the PSD*q2 profiles.

Figure 5

FIG. 5. (a) R-SoXS 2-D data set acquired at high material contrast energy (284.1 eV) for PTB7-Th:PC71BM blends prepared with CB solvent (no-additive) and CB + DIO (3% DIO) solvents; (b) azimuthally averaged I versus q (upper) and, absorption corrected and normalized q2 weighted77 (Iq2 versus q) (lower) 1-D profiles obtained from the 2-D scattering data in (a); (c) average relative domain purity (solid bar), characteristic size scale (dotted bar) calculated from the 1-D profiles in (b). Domain purity error bars were estimated from variations between relative purity values at different high material contrast energies in the energy range 282–284.2 eV. Error values for the characteristic size scales were obtained from variations in q-scale calibrations in independent measurements on identical samples.

Figure 6

FIG. 6. (a) LAADF-STEM images of PTB7-Th:α-TPB samples cast from CB (no-additive) and CB + DPE (8% DPE) solutions respectively. Scale bar, 200 nm; (b) Background subtracted PSD versus q (upper) and q2 weighted (PSD*q2 versus q) (lower) 1-D profiles calculated from FFT of the LAADF images in (a); (c) integrated PSD*q2 over observed length scales (solid bars) and characteristic size scale (dotted bars) calculated from major peak position in PSD profiles for the no-additive and 8% DPE samples. Error bars were estimated from single log-normal peak fits to the PSD*q2 profiles.

Figure 7

FIG. 7. (a) R-SoXS 2-D images acquired at high material contrast energy (283.7 eV) for PTB7 Th:α-TPB blends prepared with CB solvent (no-additive) and CB + 8% v/v DPE (8% DPE) solvents; (b) azimuthally averaged I versus q (upper) and absorption corrected and normalized q2 weighted (Iq2 versus q) (lower) 1-D profiles; (c) average relative domain purities over all length scales (solid bar), characteristic length scales (dotted bars) obtained from the 1-D scattering profiles in (b). Purity error bars were calculated from variations between relative purity values at different high material contrast energies in the energy range 283–284 eV. Size scale error bars were estimated from variations in q-scale calibrations in independent measurements.

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