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Empowering plasmonics and metamaterials technology with new material platforms

Published online by Cambridge University Press:  09 May 2014

Alexandra Boltasseva*
Affiliation:
School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, and the Technical University of Denmark; aeb@purdue.edu

Abstract

In recent years, the emerging areas of nanophotonics and, in particular, plasmonics and metamaterials, have seen an explosion of novel ideas. However, transforming revolutionary designs into practical devices requires a significant amount of effort. The constituent materials in plasmonic structures and metamaterials play a crucial role in realizing useful and efficient devices. Similar to the way silicon shaped the nanoelectronics field, finding the best set of materials for plasmonic and metamaterial devices could revolutionize the field of nanophotonics. As a potential solution, alternative plasmonic materials have recently gained significant attention. Metals, despite being essential components of plasmonic and metamaterial devices, pose many technological challenges toward the realization of practical devices—primarily due to their high optical loss, integration, and fabrication limitations. Hence, searching for an alternative is vital to the success of future nanophotonic devices. Several classes of materials, including doped semiconductor oxides and ceramics, are discussed as potential alternatives to metals that could lead to devices with drastically improved performance and new functionalities by providing low intrinsic loss, tunability, and compatibility with standard semiconductor fabrication processes.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2014 
Figure 0

Figure 1. Material space for plasmonics and metamaterials applications. The important material parameters such as carrier concentration (maximum doping concentration for semiconductors), carrier mobility, and interband losses form the optimization space for various applications. While the spherical bubbles represent materials with low interband losses, elliptical bubbles represent those with larger interband losses in the corresponding part of the electromagnetic spectrum. Adapted with permission from Reference 4.

Figure 1

Figure 2. (a) Real (ε′) and (b) imaginary (ε″) parts of the dielectric function of transparent conducting oxide (TCO) films: Al-doped ZnO, AZO (Al concentration 2 wt%), Ga-doped ZnO, GZO (Ga concentration 6 wt%), and indium tin oxide, ITO (Sn concentration 10 wt%), deposited using pulsed laser deposition. The deposition conditions were optimized to produce the lowest losses and the highest plasma frequency. Inset: 54° tilted scanning electron microscope image of an array of GZO nanodisks with a mean diameter, D = 500 nm, and height, h = 270 nm.

Figure 2

Figure 3. Optical image of thin films of metal nitrides deposited on centimeter-sized glass substrates. The films were deposited by DC reactive sputtering. The thickness of films is in the range of 100 to 120 nm. The metallic luster indicates the possibility of plasmonic behavior in the visible spectrum. The color of the films correlates with the plasma frequency or carrier concentration in these films. Reprinted with permission from Reference 12. © 2013 Wiley.

Figure 3

Figure 4. Comparison of optical properties of alternative plasmonic materials with those of conventional metals.19 Optical constants of low loss thin films of TiN, ZrN, and transparent conducting oxides (TCOs) (AZO, Al-doped ZnO; GZO, Ga-doped ZnO; and ITO, indium tin oxide) are plotted along with those of gold and silver. The arrows show the wavelength ranges in which nitrides and TCOs are respectively metallic. (a) TCOs and nitrides have smaller negative permittivity values than those of metals, while (b) compares material losses and shows that losses in TCOs are many times smaller than those in either gold or silver. The losses in nitrides are slightly higher than metals due to interband transitions at the crossover. Note: ε′, real part of the dielectric function; ε″, imaginary part of the dielectric function.

Figure 4

Figure 5. (a) Comparison of the figures of merit (FOMs) for localized surface plasmon resonance (LSPR): the maximum field intensity enhancement on the surface of a spherical nanoparticle (inset) of the plasmonic material computed from quasistatic approximations12 at two wavelengths, 500 and 1700 nm. The nanoparticles are assumed to be in a host of refractive index 1.33. The same order of magnitude (or even higher) can be obtained for the enhanced field in new plasmonic materials compared to noble metals. (b) The FOM of hyperbolic metamaterials (HMMs) (inset), defined as the ratio of the real (Re(kz)) and imaginary (Im(kz)) parts of the wave vector perpendicular to the layers, along the z direction16 for two wavelengths, 500 and 1700 nm. The calculations are for planar alternating layers of metal/dielectric layers formed by different pairs of materials. In the optical range, alternative plasmonic materials clearly outperform noble metals by orders of magnitude. Note: Imax, maximum field intensity on the surface of a spherical nanoparticle; I0, intensity of the incident field; E0, incident field; ITO, indium tin oxide; GZO, Ga-doped ZnO; AZO, Al-doped ZnO. Columns are color graded for illustrative purposes.

Figure 5

Figure 6. (a) Schematic of a layered metamaterial with subwavelength layers grown as a superlattice (gray and black spheres schematically represent atoms of Ti and N, respectively, while light and dark blue spheres represent atoms of Al or Sc and N, respectively); (b) a high-resolution transmission electron microscope image of the interface (blue arrow) between TiN and Al0.6Sc0.4N layers in the superlattice together with the fast Fourier transforms corresponding to the diffractograms on either sides of the interface (TiN and Al0.6Sc0.4N layers).27 Sharp interfaces and perfect lattice matching are evident.