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Vertical interconnects of microbumps in 3D integration

Published online by Cambridge University Press:  10 March 2015

Chih Chen
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Taiwan; chih@mail.nctu.edu.tw
Doug Yu
Affiliation:
Taiwan Semiconductor Manufacturing Company, Taiwan; chyu@tsmc.com
Kuan-Neng Chen
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Taiwan; knchen@mail.nctu.edu.tw

Abstract

With the electronics packaging industry shifting increasingly to three-dimensional packaging, microbumps have been adopted as the vertical interconnects between chips. Consequently, solder volumes have decreased dramatically, and the solder thickness has reduced to a range between a few and 10 microns. The solder volume of a microbump is approximately two orders of magnitude smaller than a traditional flip-chip joint. In contrast, the thickness of the under-bump metallization (UBM) remains almost the same as that in flip-chip solder joints. Therefore, many issues concerning materials and reliability of microbumps arise. This article reviews the challenges related to microbump materials for vertical interconnects, including transformation of solder joints into intermetallic (IMC) joints, necking or voiding induced by side wetting/diffusion on the circumference of the UBM, formation of porous Cu3Sn IMCs, early electromigration failures caused by specific orientations of Sn grains, and precipitation of plate-like Ag3Sn IMCs. An alternative way of fabricating vertical interconnects using direct Cu-to-Cu bonding is also discussed.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2015 
Figure 0

Figure 1. Cross-sectional scanning electron microscope images showing (a) the typical structure of a flip-chip solder joint and (b) the structure of a microbump for vertical interconnects between chips.5

Figure 1

Figure 2. Cross-sectional scanning electron microscope images depicting intermetallic (IMC) microbumps. (a) IMC microbumps of Cu/Cu3Sn/Cu6Sn5/Cu3Sn/Cu formed after reflow at 260°C for 40 min, and (b) a Ni3Sn4 IMC microbump formed after current stressing by 9.6 × 104 A/cm2 at 164°C for 130 h.7

Figure 2

Table I. Resistivity, elastic modulus, and melting points for Ni3Sn4, Cu6Sn5, Cu3Sn, and SnAg solders.

Figure 3

Figure 3. (a) As-fabricated Cu/Ni/solder/Ni/Cu microbump. (b) After reflow at 260°C for 20 min, side wetting occurred, and Sn diffused to the circumference of Ni and Cu under-bump metallization to form Ni3Sn4 and Cu3Sn, respectively, resulting in the complete depletion of the solder.55

Figure 4

Figure 4. (a) As-fabricated Cu/solder/Cu microbump with 8-μm-thick SnAg solder. (b) Porous Cu3Sn is formed in the microbump attributed to side wetting on the circumference of Cu under-bump metallization after reflow at 260°C for 12 h.28

Figure 5

Figure 5. Cross-sectional images of microbumps after current stressing by 9.6 × 104 A/cm2 at 164°C for 1–30 h. (a), (c), and (e) are scanning electron microscope images; (b), (d), and (f) are grain orientations mapped by electron backscatter diffraction (EBSD).6 The EBSD maps show the orientation of the remaining Sn grains after current stressing. The angle labeled in the maps represents the angle between the current direction and the c-axis of the Sn grain. Note: IMC, intermetallic.

Figure 6

Figure 6. Cross-sectional backscatter scanning electron microscope images of 4.0-μm-thick Sn2.5Ag microbumps after reflowing for (a) 0 min and (b) 10 min at 260°C.29

Figure 7

Figure 7. Bonding between two sputtered (111) Cu films at 150°C for 1 h. (a) Bright-field transmission electron microscope (TEM) image of two (111) nanotwinned Cu films after bonding. (b) Dark-field TEM image of the Cu films, indicating the grains are (111) oriented.52