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Thermal decomposition and fractal properties of sputter-deposited platinum oxide thin films

Published online by Cambridge University Press:  20 December 2011

Adolfo Mosquera
Affiliation:
Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid, Spain
David Horwat
Affiliation:
Institut Jean Lamour, Ecole des Mines de Nancy, 54042 Nancy, France
Luis Vazquez
Affiliation:
Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid, Spain
Alejandro Gutiérrez
Affiliation:
Departamento de Física Aplicada and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
Alexei Erko
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Elektronenspeicherring BESSY II, 12489 Berlin, Germany
André Anders
Affiliation:
Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720
Joakim Andersson
Affiliation:
The Angstrom Laboratory, Uppsala University, S-75121 Uppsala, Sweden
Jose L. Endrino*
Affiliation:
Abengoa Research, Campus Palmas Altas, E-41014 Sevilla, Spain
*
a)Address all correspondence to this author. e-mail: jose.endrino@research.abengoa.com

Abstract

Porous platinum thin films were prepared by thermal decomposition at temperatures from 25 to 675 °C of platinum oxide films deposited by a pulsed reactive sputtering technique. The samples’ chemistry and structure were investigated by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and x-ray absorption near edge structure (XANES), showing that the decomposition of the oxide begins as low as 400 °C and follows a sigmoidal trend with increasing annealing temperature. In the XRD spectra, only an amorphous-like signature was observed for temperatures below 575 °C, while Pt 4f XPS showed that the deposited oxide was a mixture of PtO2 and PtO. Pt-L3 edge XANES and Pt 4f XPS spectra showed that the Pt concentration and electronic structure are predominant for temperatures equal to or above 575 °C. The morphologies of the films were investigated by the area-perimeter method from atomic force microscopy and scanning electron microscopy (SEM) images, indicating that the surfaces exhibit a combination of Euclidian and fractal characteristics. Moreover, the thermal evolution of these characteristics indicates the agglomeration of the grains in the film as observed by SEM.

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Articles
Copyright
Copyright © Materials Research Society 2011
Figure 0

FIG. 1. X-ray diffraction pattern of PtOx films annealed at different temperatures.

Figure 1

TABLE I. X-ray photoelectron spectroscopy data for the different thermal treatment of the PtOx films.

Figure 2

FIG. 2. X-ray photoelectron spectroscopy spectra of PtOx thin films after annealing at different temperatures (°C) indicated in the curves.

Figure 3

FIG. 3. Platinum fraction in the remaining material following annealing of the original PtOx films.

Figure 4

FIG. 4. Pt-L3 XAS spectra recorded after heat treatment of the PtOx samples at temperatures indicated on the curves.

Figure 5

FIG. 5. Atomic force microscopy (AFM) images of PtOx thin films annealed at different temperatures: (a) 25 °C, (b) 575 °C, (c) 600 °C, and (d) 675 °C.

Figure 6

FIG. 6. Scanning electron microscopy (SEM) images of PtOx thin films annealed at different temperatures: (a) 25 °C, (b) 575 °C, (c) 600 °C, and (d) 675 °C.

Figure 7

FIG. 7. Perimeter versus area logarithmic plots for samples obtained after annealing at different temperatures and analyzed by (a) SEM and (b) AFM. The change in the slope is the crossover area indicating where the slope changes.

Figure 8

TABLE II. Surface fractal dimension Ds and cross area calculated from the analysis of atomic force microscopy (AFM) and scanning electron microscopy (SEM) images.