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Effect of radio frequency sputtering power on W–TiO2 nanotubes to improve photoelectrochemical performance

Published online by Cambridge University Press:  25 May 2012

Chin Wei Lai
Affiliation:
School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang, Malaysia, 14300
Srimala Sreekantan*
Affiliation:
School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang, Malaysia, 14300
Pei San E
Affiliation:
School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang, Malaysia, 14300
*
a)Address all correspondence to this author. e-mail: srimala@eng.usm.my

Abstract

The present study aims to determine the optimum radio frequency (RF) sputtering power to obtain the desired W–TiO2 nanotubes for the best photoelectrochemical (PEC) performance. Tungsten (W) was deposited on titania (TiO2) nanotube arrays via RF sputtering technique under different sputtering powers from 50 to 250 W. The optimum content of W on TiO2 nanotube arrays play a significant role in maximizing the photocurrent generation efficiency to promote charge separation by accumulation of photogenerated electrons. The sputtering power below 180 W exhibited high-ordered and unbroken TiO2 nanotube arrays. However, the sputtering power over 180 W exhibited broken nanotube arrays and an oxide layer was formed due to the impact of high energy ions accelerated by a high sputtering power. The TiO2 nanotube arrays sputtered with tungsten at 50 W showed a better photocurrent density (1.55 mA/cm2), with a photoconversion efficiency of 2.2% in the PEC performance among the samples due to the effective charge separation and reduced recombination center in the resultant W–TiO2 nanotubes.

Information

Type
Articles
Copyright
Copyright © Materials Research Society 2012
Figure 0

FIG. 1. FESEM top view image of different W sputtering powers for (a) pure TiO2 nanotubes, (b) 50 W, (c) 100 W, (d) 180 W, (e) 200 W, and (f) 250 W on the TiO2 nanotubes, inset image with cross sectional view.

Figure 1

FIG. 2. TEM images of different W sputtering powers for (a) pure TiO2 nanotubes, (b) 50 W, (c) 180 W, and (d) 250 W on the TiO2 nanotubes.

Figure 2

FIG. 3. Schematic illustration explaining the effect of different RF sputtering powers on the TiO2 nanotubes: (a) low RF power (< 100 W), (b) RF power between 100 and 180 W, and (c) high RF power (> 250 W).

Figure 3

FIG. 4. EDX spectrum of different W sputtering powers for (a) pure TiO2 nanotubes, (b) 50 W, (c) 100 W, (d) 180 W, (e) 200 W, and (f) 250 W on the TiO2 nanotubes.

Figure 4

FIG. 5. The EDX analysis of different W sputtering powers for (a) 50 W, (b) 180 W, and (c) 250 W on the cross sectional TiO2 nanotube arrays.

Figure 5

TABLE I. Roughness parameters obtained via AFM for the pure TiO2 and W–TiO2 nanotubes using different RF sputtering powers.

Figure 6

FIG. 6. X-ray diffraction pattern of the TiO2 nanotubes sputtered with W at different sputtering powers: (a) Pure TiO2, (b) 50 W, (c) 100 W, (d) 180 W, (e) 200 W, and (f) 250 W [A= Anatase, Ti= Titanium].

Figure 7

FIG. 7. Photocurrent density vs. potential applied of the different RF sputtering powers of the W-TiO2 nanotubes in light condition, (a) 50 W, (b) 100 W, (c) 180 W, (d) 200 W, (e) Pure TiO2 nanotubes, and (f) 250 W.

Figure 8

FIG. 8. Potentiostatic plot of photocurrent for (a) Pure TiO2 nanotube and W-TiO2 nanotubes, (b) 50 W, (c) 100 W, (d) 180 W, (e) 200 W, and (f) 250 W at 0.5 V under interrupted light illumination.

Figure 9

FIG. 9. Photoconversion efficiency vs. potential applied of W sputtered on the amorphous structure of the TiO2 nanotubes of different RF sputtering powers: (a) 100 W, (b) 50 W, (c) 180 W, (d) 200 W, (e) pure TiO2 nanotubes, and (f) 250 W.

Figure 10

TABLE II. The photoconversion efficiency for the pure TiO2 and W–TiO2 nanotubes using different RF sputtering powers.