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Low noise amplifier for radio astronomy

Published online by Cambridge University Press:  23 January 2013

David M.P. Smith*
Affiliation:
Department of Electrical and Electronic Engineering, Stellenbosch University, Stellenbosch, 7600, South Africa. Phone: + 31 521 595 152
Laurens Bakker
Affiliation:
ASTRON, Postbus 2, 7990 AA, Dwingeloo, The Netherlands
Roel H. Witvers
Affiliation:
ASTRON, Postbus 2, 7990 AA, Dwingeloo, The Netherlands
Bert E.M. Woestenburg
Affiliation:
ASTRON, Postbus 2, 7990 AA, Dwingeloo, The Netherlands
Keith D. Palmer
Affiliation:
Department of Electrical and Electronic Engineering, Stellenbosch University, Stellenbosch, 7600, South Africa. Phone: + 31 521 595 152
*
Corresponding author: D. M. P. Smith Email: smith@astron.nl
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Abstract

A compact, microstrip, two-stage, room temperature, single-ended low noise amplifier (LNA) is designed using commercial components for Aperture Tile in Focus (APERTIF), a square kilometre array (SKA) pathfinder project. Various techniques are investigated to insert inductance between the source pad of the package and the ground plane of the printed circuit board (PCB), with the chosen design able to do this using standard manufacturing techniques. The desired noise temperature of 25 K (noise figure (NF) of 0.36 dB) is met over the 1.0–1.8 GHz band, with an input return loss better than 10 dB.

Information

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 
Figure 0

Table 1. APERTIF Specifications.

Figure 1

Table 2. System temperature contributions.

Figure 2

Table 3. LNA specification.

Figure 3

Fig. 1. Diagram of LNA.

Figure 4

Table 4. Avago package noise parameters.

Figure 5

Table 5. Ommic package noise parameters.

Figure 6

Fig. 2. Component amplifier noise temperature.

Figure 7

Table 6. Component amplifier power parameters.

Figure 8

Fig. 3. Diagram of glued package (side view).

Figure 9

Fig. 4. Diagram of embedded package (side view).

Figure 10

Fig. 5. Diagram of bottom layer etched package (top view).

Figure 11

Fig. 6. Diagram of top layer etched package (top view).

Figure 12

Fig. 7. Circuit of LNA.

Figure 13

Fig. 8. Photograph of glued package (top view).

Figure 14

Fig. 9. Photograph of embedded package (top view).

Figure 15

Fig. 10. Photograph of bottom layer etched package (top view).

Figure 16

Fig. 11. Photograph of top layer etched package (top view).

Figure 17

Fig. 12. Photograph of top layer etched package revised (top view).

Figure 18

Fig. 13. Amplifier input matching results.

Figure 19

Fig. 14. Amplifier output matching results.

Figure 20

Fig. 15. Amplifier isolation results.

Figure 21

Fig. 16. Amplifier gain results.

Figure 22

Fig. 17. Indirect grounding results.

Figure 23

Fig. 18. Chip component tolerance results for input match (S11).

Figure 24

Fig. 19. Amplifier stability results.

Figure 25

Fig. 20. Amplifier noise temperature results.

Figure 26

Fig. 21. Amplifier noise temperature results comparison.