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Materials for stretchable electronics in bioinspired and biointegrated devices

Published online by Cambridge University Press:  12 March 2012

Dae-Hyeong Kim
Affiliation:
Seoul National University, Institute of Chemical Processes, Korea; dkim98@snu.ac.kr
Nanshu Lu
Affiliation:
University of Texas at Austin, USA; nanshulu@illinois.edu
Yonggang Huang
Affiliation:
Northwestern University, USA; y-huang@northwestern.edu
John A. Rogers
Affiliation:
University of Illinois at Urbana-Champaign, USA; jrogers@uiuc.edu

Abstract

Inorganic semiconductors such as silicon, gallium arsenide, and gallium nitride provide, by far, the most well-established routes to high performance electronics/optoelectronics. Although these materials are intrinsically rigid and brittle, when exploited in strategic geometrical designs guided by mechanics modeling, they can be combined with elastomeric supports to yield integrated devices that offer linear elastic responses to large strain (∼100%) deformations. The result is an electronics/optoelectronics technology that offers the performance of conventional wafer-based systems, but with the mechanics of a rubberband. This article summarizes the key enabling concepts in materials, mechanics, and assembly and illustrates them through representative applications, ranging from electronic “eyeball” cameras to advanced surgical devices and “epidermal” electronic monitoring systems.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2012
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Figure 1. Schematic illustrations (left) and corresponding images (right) of semiconductor nanoribbons and membranes derived from wafer-scale sources of material by lithographic patterning and undercut etching. (a) Anisotropic wet chemical etching of a silicon wafer with (111) orientation. The scanning electron microscope image on the right shows a collection of partially released ribbons (∼500 nm thickness). (b) Etching the exposed buried oxide of a silicon-on-insulator (SOI) wafer releases the top silicon to yield collections of nanoribbons (thicknesses of 300 nm shown here). (c) Etching sacrificial layers of AlAs in epitaxial multilayer stacks of GaAs/AlAs releases large quantities of GaAs nanomembranes. Reproduced with permission from Reference 63. ©2010, Nature Publishing Group.

Figure 1

Figure 2. Transfer printing provides a high speed, scalable method for deterministic assembly of semiconductor nanomaterials into organized layouts. (a) Schematic illustration of the printing process. (b) Image of an automated transfer printing tool, composed of a collection of precision, computer-controlled motion stages, and a high resolution imaging system for overlay registration. (c) Image of an array of GaAs membranes (250 × 250 μm) transfer printed onto a plate of glass and a thin, flexible sheet of plastic (inset). Reproduced with permission from Reference 23. ©2009, American Association for the Advancement of Science.

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Figure 3. Experimental images (left) and mechanics modeling (right) of four different classes of structures with controlled buckling for high performance stretchable electronics. (a) A silicon nanomembrane uniformly bonded to an elastomeric substrate adopts a “wavy,” herringbone morphology. Reproduced with permission from Reference 19. ©2007, American Chemical Society. (b) A similar membrane structured into a mesh layout and selectively bonded only at the nodes takes a form that involves suspended, arc-shaped bridges (interconnects). This design offers enhanced ranges of stretchability compared to the case in (a). (c) Exploiting elastomer substrates with features of surface relief matched to the nodes of the mesh structures improves the mechanics to enable both high areal coverage and a large range of stretchability. Reproduced with permission from Reference 74. ©2011, John Wiley & Sons, Inc. (d) Advanced version of the structure in (b), where the interconnect bridges have non-coplanar serpentine shapes. Reproduced with permission from Reference 21. ©2008, National Academy of Sciences.

Figure 3

Figure 4. Examples of stretchable silicon circuits, AlInGaP light-emitting diodes and GaAs photovoltaics. (a) Two-dimensional wavy complementary metal oxide silicon (CMOS) circuits, in as-fabricated (top) and deformed (bottom) configurations. Reproduced with permission from Reference 20. ©2008, American Association for the Advancement of Science. (b) An array of GaAs photovoltaic microcells on a structured elastomer substrate. Reproduced with permission from Reference 74. ©2011, John Wiley & Sons, Inc. (c) Array of GaAs microscale inorganic light-emitting diodes (μ-ILEDs) in a flat state and twisted by 360° and 720°. (d) Strain distributions in the twisted substrates, calculated by 3D finite element modeling for the case of the 720° twist. Reproduced with permission from Reference 24. ©2010, Nature Publishing Group.

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Figure 5. Examples of stretchable electronics/optoelectronics integrated onto diverse substrates, facilitated by the use of thin, strain-isolating adhesives. (a) Silicon CMOS circuits on a piece of fabric (a), and on vinyl (b) and leather (c) gloves. Interconnected array of microscale inorganic light-emitting diodes (μ-ILEDs) on a piece of folded paper (d), a sheet of aluminum foil (e), and a leaf (f). (a–c) Reproduced with permission from Reference 22. ©2009, John Wiley & Sons, Inc. (d–f) Reproduced with permission from Reference 24. ©2010, Nature Publishing Group.

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Figure 6. (a) Image of a hemispherical electronic eye camera. (b) Picture of an eye captured using the camera shown in (a), rendered in the hemispherical geometry of the photodetector array (top), and in a planar projection (bottom). Inset shows the original picture. (c) Images of an electronic eye camera that incorporates a photodetector array with tunable curvature, in flat (left) and convex (right) states. (d) Pictures of a test pattern captured using such a tunable device, at four different zoom magnification settings (r, radius of curvature). Reproduced with permission from Reference 81. ©2011, National Academy of Sciences.

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Figure 7. (a) Image of an electrophysiological (EP) sensor array conformally laminated onto the epicardial surface of a porcine animal model. The inset provides a magnified view. (b) Mapping results at four different times (t), where the measured surface potential is displayed as a color map. Reproduced with permission from Reference 43. ©2010, American Association for the Advancement of Science. (c) A multifunctional “instrumented” balloon catheter in its deflated (top) and inflated (bottom) states. The device includes EP and rf ablation electrodes, temperature sensors, pressure sensors, and arrays of microscale inorganic light-emitting diodes (μ-ILEDs). (d) Electrocardiogram recorded by a pair of EP electrodes positioned on the right ventricle (RV) of a rabbit heart (top) and an image of lesions created by rf ablation (bottom). The inset shows EP and rf ablation electrodes and a temperature sensor. Reproduced with permission from Reference 44. ©2011, Nature Publishing Group.

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Figure 8. (a) Images of an epidermal electronic system (EES) mounted on human skin, in compressed (left) and stretched (right) states. The EES collapses under its own weight after detachment from the skin (bottom). The inset shows a schematic cross-sectional layout, highlighting the thin construction and the neutral mechanical plane (NMP) design of the polyimide (PI) and device. (b) Electrocardiogram recorded from the chest using an EES (left) and magnified view (right) that shows clear Q, R, and S waveforms. The bottom frame shows spectrographs of alpha rhythm recordings with eyes closed and open for the first 10 and subsequent 10 seconds, respectively. Reproduced with permission from Reference 45. ©2011, American Association for the Advancement of Science.