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Materials science in the artificial intelligence age: high-throughput library generation, machine learning, and a pathway from correlations to the underpinning physics

Published online by Cambridge University Press:  22 July 2019

Rama K. Vasudevan*
Affiliation:
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
Kamal Choudhary
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Apurva Mehta
Affiliation:
Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA
Ryan Smith
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Gilad Kusne
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Francesca Tavazza
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Lukas Vlcek
Affiliation:
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
Maxim Ziatdinov
Affiliation:
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
Sergei V. Kalinin
Affiliation:
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
Jason Hattrick-Simpers
Affiliation:
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
*
Address all correspondence to Rama K. Vasudevan at vasudevanrk@ornl.gov

Abstract

The use of statistical/machine learning (ML) approaches to materials science is experiencing explosive growth. Here, we review recent work focusing on the generation and application of libraries from both experiment and theoretical tools. The library data enables classical correlative ML and also opens the pathway for exploration of underlying causative physical behaviors. We highlight key advances facilitated by this approach and illustrate how modeling, macroscopic experiments, and imaging can be combined to accelerate the understanding and development of new materials systems. These developments point toward a data-driven future wherein knowledge can be aggregated and synthesized, accelerating the advancement of materials science.

Information

Type
Artificial Intelligence Prospectives
Copyright
Copyright © The Author(s) 2019 
Figure 0

Figure 1. Progress in materials science requires understanding driving forces governing phenomena, so that materials can be both discovered and optimized for applications. Fundamentally, accessing the knowledge space to accelerate this cycle requires the availability of data from simulations and the experiment for materials synthesized under different conditions. Imaging provides a window into local configurations and provides a critical link for understanding the driving forces of observed behavior. ML tools enable the generation of these databases and facilitate a rapid prediction of properties from data-driven models. Similarly, the data can be synthesized together in a Bayesian formulation, or using statistical mechanical models, to agglomerate all available sources of information to produce more accurate predictions. Ideally, the knowledge gained will be transferable, enabling more efficient design cycles for similar material systems. These tools all require community efforts for availability of code, data, and workflows, that is critical to realizing this new future.

Figure 1

Table I. Examples of AI-based material-property predictions for different types of materials.

Figure 2

Figure 2. Illustrating the glass-forming ability of a novel Co-V-Zr alloy (left) and its predicted elastic modulus (right).

Figure 3

Figure 3. Creating local imaging libraries. (a) STEM imaging of Si impurities in graphene monolayer. (b) Categorization of defects in (a) based on the number/type of chemical species in their first coordination sphere via a DL-based approach. (c) The extracted 2D atomic coordinates of these defects are then used as an input into DFT calculations to obtain a fully relaxed 3D structure and calculate electronic properties (in this case, the local density of electronic states for the bands below (EV) and above (EC) the Fermi level). (d) The DFT-calculated data can be then used to search for the specific type of defects in the STM data from the same sample, which measures the local density of states. The search can be performed manually (if the number of STM images is small) or automatically by training a new ML classifier for categorizing the STM data. Image adapted from Ziatdinov et al.[151]

Figure 4

Figure 4. (a) General-mode acquisition (G-mode) differs from a standard measurement, in that the raw data is stored without pre-processing such as use of a lock-in amplifier. (b) The raw response of the cantilever deflection signal is Fourier transformed and processed using a band-pass filter and a user-defined noise floor threshold. The cleaned data is then transformed back to the time domain to reconstruct the hysteresis loops. Since many hysteresis loops are captured, the data is better represented as a 2D histogram (bottom right). This enables rapid mapping of relevant material parameters, such as the coercive voltage. This can, in principle, be stored along with global (macroscopic) characterization to populate libraries of materials behavior. Figure is adapted from Somnath et al.[172]

Figure 5

Figure 5. G-IV for rapid mapping of local electronic conductance. (a) Typical I–V measurements on SPM platforms utilize a regimen where after the voltage is stepped to the new value, a delay time is introduced before the current is averaged, as shown in the inset. On the other hand, the G-IV mode utilizes sinusoidal excitation at high frequency (200 Hz in this case), with results shown for a single point on a ferroelectric PbZr0.2Ti0.8O3 nanocapacitor in (b). The raw current (Imeas), the reconstructed current (Irec) given the resistance–capacitance circuit model, and the inferred current without the capacitance contribution (IBayes) are plotted. This method also allows the uncertainty in the inferred resistance traces to be determined, as shown in the respective plots of R(V) with the standard deviation shaded. White space indicates areas where the resistance is too high to be accurately determined. Reconstructing the current after the measurement can facilitate rapid mapping of switching disorder in the nanocapacitors, with the computed parameter for disorder mapped in (c). Figure is adapted from Somnath et al.[171]

Figure 6

Figure 6. Statistical distance framework. (a) Statistical distance between a model P and a target Q is defined as a distance in probability space of the local configurations. This metric enables the estimation of the ability to distinguish samples arising from thermodynamic systems (under equilibrium considerations). (b) STM image of FeSe0.45Te0.55 system with Se atoms (dark contrast) and Te atoms (bright contrast). The structure of the unit cell is shown in (c). (d) Atomic configurations histogram from both the data and the optimized model in blue and teal colors, as well as from a model that has no interactions (i.e., is random) plotted in red. Once the generative model is optimized, it can be run sampled for different temperatures, as in (e). Note that reduced T units are utilized. Reprinted (adapted) with permission from Vlcek et al.[185] Copyright (2017) American Chemical Society.