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Focused ion beam and scanning electron microscopy for 3D materials characterization

Published online by Cambridge University Press:  09 April 2014

Paul G. Kotula
Affiliation:
Sandia National Laboratories; paul.kotula@sandia.gov
Gregory S. Rohrer
Affiliation:
Carnegie Mellon University; gr20@andrew.cmu.edu
Michael P. Marsh
Affiliation:
Marsh Imaging and Visualization; mike@marshimaging.com

Abstract

In this article, we review focused ion beam serial sectioning microscopy paired with analytical techniques, such as electron backscatter diffraction or x-ray energy-dispersive spectrometry, to study materials chemistry and structure in three dimensions. These three-dimensional microanalytical approaches have been greatly extended due to advances in software for both microscope control and data interpretation. Samples imaged with these techniques reveal structural features of materials that can be quantitatively characterized with rich chemical and crystallographic detail. We review these technological advances and the application areas that are benefitting. We also consider the challenges that remain for data collection, data processing, and visualization, which collectively limit the scale of these investigations. Further, we discuss recent innovations in quantitative analyses and numerical modeling that are being applied to microstructures illuminated by these techniques.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2014 
Figure 0

Figure 1. Reconstructed serial sections of electron backscatter diffraction data for a ferritic steel. The volume consists of 68 parallel layers. The colors are the orientations referred to as the normal direction.4

Figure 1

Figure 2. Representations of the grain boundary character distribution for pure Ni.9 (a) Misorientation angle distribution is shown with blue dots. The red squares show a random distribution for comparison. Note the break in the vertical axis. (b) The distribution of misorientation axes for all grain boundaries with a 60° misorientation. (c) The distribution of grain boundary planes, ignoring misorientation, in the crystal reference frame. (d) The distribution of grain boundary planes for all boundaries with a misorientation of 60° around [111]. (b–d) are stereographic projections, and the units are multiples of a random distribution (MRD).

Figure 2

Figure 3. (a) Secondary-electron image showing the trenches, protective Pt layer, and fiducial (reference) markers for a copper silver eutectic alloy taken to approximate the view of the analysis surface seen by the x-ray spectrometer. (b) Schematic of the analysis geometry with (1) first stair-step trench, (2) second stair-step trench, and (3) fiducial markers. Reprinted with permission from Reference 24. © 2006 Cambridge University Press.

Figure 3

Figure 4. (a–f) Selected views of the multivariate statistical analysis-derived 3D component images corresponding to the different chemical phases found. Red is Au, green is Cu, blue is Si-O, cyan is Cu-S, and yellow is Ni. Reprinted with permission from Reference 24. © 2006 Cambridge University Press.