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Application of scanning electron diffraction in the transmission electron microscope for the characterisation of dislocations in minerals

Published online by Cambridge University Press:  30 July 2018

Billy C. Nzogang
Affiliation:
Université de Lille, CNRS, INRA, ENSCL, UMR 8207 – UMET – Unité Matériaux et Transformations, F-59000 Lille, France
Alexandre Mussi
Affiliation:
Université de Lille, CNRS, INRA, ENSCL, UMR 8207 – UMET – Unité Matériaux et Transformations, F-59000 Lille, France
Patrick Cordier*
Affiliation:
Université de Lille, CNRS, INRA, ENSCL, UMR 8207 – UMET – Unité Matériaux et Transformations, F-59000 Lille, France
*
*Author for correspondence: Patrick Cordier, Email: patrick.cordier@univ-lille.fr
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Abstract

We present an application of scanning electron diffraction for the characterisation of crystal defects in olivine, quartz and phase A (a high pressure hydrated phase). In this mode, which takes advantage of the ASTAR™ module from NanoMEGAS, a slightly convergent probe is scanned over the sample with a short acquisition time (a few tens of ms) and the spot patterns are acquired and stored for further post-processing. Originally, orientation maps were constructed from automatic indexing at each probe location. Here we present another application where images are reconstructed from the intensity of diffraction spots, producing either so-called ‘virtual’ bright- or dark-field images. We show that these images present all the characteristics of contrast (perfect crystal or defects) of conventional transmission electron microscopy images. Data are acquired with a very short time per probe location (a few tens of milliseconds), this technique appears very attractive for the characterisation of beam-sensitive materials. However, as the acquisition is done at a given orientation, fine tuning of the diffraction conditions at a given location for each reflection is not possible. This might present a difficulty for some precise, quantitative contrast analysis.

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Type
Article
Copyright
Copyright © Mineralogical Society of Great Britain and Ireland 2018 
Figure 0

Fig. 1. Microscope settings. (a) Conventional TEM dark-field. The electron beam is parallel. The sample is tilted to orientate a given diffraction plane close to Bragg conditions. A contrast aperture is used in the back focal plane so as to select the diffracted beam to form the image that is recorded. To perform using weak-beam dark-field mode the specimen is slightly tilted away from the exact Bragg conditions. (b) Scanning electron diffraction. The microscope is set in microprobe mode (the electron beam has a small convergence) and the spot is scanned over the sample. Only the diffraction patterns are recorded and stored.

Figure 1

Fig. 2. Olivine. Acquisition parameters: spot size = 1 nm; step size = 2 nm; acquisition time = 10 ms; and 1200 × 1200 points. (a) Diffraction pattern. The sample is oriented close to the [210] zone axis. (b) Simulation of the diffraction pattern with electron diffraction. The spot diameter indicates the intensity. (c–l) Virtual dark-field images: the diffraction vector is indicated on the images.

Figure 2

Fig. 3. Olivine. Burgers vectors determinations on enlargements of Fig. 2. (a) With $00{\bar 4}$, only [001] dislocations are in contrast. (b) With ${\bar 1}2{\bar 2}$, all dislocations are visible. (c) Intensity profile along the AA’ line from Fig 3a. The width of the dislocation image is ~12 nm. (d) Intensity profile along the BB’ line (top-down direction on the line corresponds to left-right direction on the profile) from Fig 3b showing the respective intensity of [100] and [001] dislocations.

Figure 3

Fig. 4. Quartz. Acquisition parameters: spot size = 1 nm; step size = 2 nm; acquisition time = 30 ms; and 1500 × 1500 points. The sample is oriented close to the $\lsqb {{\bar 1}{\bar 1}20} \rsqb \; $ zone axis. (a) Conventional TEM bright-field image. (b) Virtual bright-field image. (c–d) Virtual dark-field images with $\lcub {1{\bar 1}01} \rcub $ (for explanation of arrowed features, see text).

Figure 4

Fig. 5. Quartz. Acquisition parameters: spot size 1 nm; step size 2 nm; acquisition time 30 ms; 1500 × 1500 points. (a) Diffraction pattern. The sample is oriented close to the $\lsqb {{\bar 1}{\bar 1}20} \rsqb \; $ zone axis. (b) Virtual bright-field image. (c–j) Virtual dark-field images: the diffraction vector is indicated on the pictures.

Figure 5

Fig. 6. Quartz. Enlargements of Fig. 5 showing some dislocation loops. All pictures are 100 × 100 pixels, i.e. 200 nm wide. (a) Loop α from Fig. 5c, g: $1{\bar 1}00;\; $(b) same loop as (a), i.e. loop α from Fig. 5f, g: ${\bar 1}10{\bar 1}$; (c) loop β from Fig. 5i, g: $3{\bar 3}01;$ (d) same loop as (c), i.e. loop β from Fig. 5f, g: ${\bar 1}10{\bar 1}$; (e) loop γ from Fig. 5g, g: $2{\bar 2}00;$ (f) same loop as (e), i.e. loop γ from Fig. 5h, g: ${\bar 2}200$.

Figure 6

Fig. 7. Phase A. Conventional TEM weak-beam dark-field images. The sample is oriented close to the $\lsqb {11{\bar 2}0} \rsqb \; $ zone axis. Observation conditions were performed to minimise beam damage, i.e. by using a small condenser aperture (100 μm), a small spot size (300 nm), a low magnification (M = 3900 × using photographic plates for further enlargement) and a Gatan® cooling TEM holder operated with liquid nitrogen (T ≈ –160°C near the thin foil). Acquisition time is ~10 s for each micrograph. (a) g: ${\bar 2}20{\bar 2}$; (b) g: $2{\bar 2}0{\bar 2;} $ and (c) g: $000{\bar 8}$. Note the spotty background and the formation of tiny loops on the dislocation lines (arrowed) due to beam damage after ca. 3 min of observation on this area.

Figure 7

Fig. 8. Phase A. Acquisition parameters: spot size 1 nm; fluence rate 3.5 × 105 electrons.nm–2.s–1; step size 2 nm; and acquisition time 60 ms. The images presented are cropped from a map recorded with 700 × 700 points. (a) Diffraction pattern. The sample is oriented close to the $\lsqb {5{\bar 4}{\bar 1}0} \rsqb$ zone axis. (b) Indexation of the diffraction pattern highlighting the diffraction vectors used. (c–g) Virtual dark-fields: the diffraction vector is indicated on the images.

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