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Static recrystallization and grain growth of accumulative roll bonded aluminum laminates

Published online by Cambridge University Press:  12 October 2017

Laura Lienshöft
Affiliation:
Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden D-01062, Germany
Paul Chekhonin
Affiliation:
Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden D-01062, Germany
Dana Zöllner
Affiliation:
Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden D-01062, Germany
Juliane Scharnweber
Affiliation:
Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden D-01062, Germany
Tom Marr
Affiliation:
Leibniz-Institut für Festkörper- und Werkstoffforschung (IFW Dresden), Institut für Metallische Werkstoffe, D-01069 Dresden, Germany
Tina Krauter
Affiliation:
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Materials Science & Engineering, Institute I, Erlangen D-91058, Germany
Heinz Werner Hoeppel
Affiliation:
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Materials Science & Engineering, Institute I, Erlangen D-91058, Germany
Werner Skrotzki*
Affiliation:
Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden D-01062, Germany
*
a) Address all correspondence to this author. e-mail: werner.skrotzki@tu-dresden.de

Abstract

Aluminum laminates of high and technical purity layers were produced by accumulative roll bonding (ARB) at room temperature. To study the thermal stability, the laminates after 2 to 9 ARB cycles were annealed between 100 and 400 °C for one hour. Changes of the microstructure were analyzed by electron backscatter diffraction. For low ARB cycle numbers (4 or below) and 300 °C annealing temperature, the deformed technical pure layers start to recrystallize while the high-purity coarse recrystallized layers experience intralayer grain growth. For higher ARB cycle numbers (6 and 8) and an annealing temperature of 300 °C or above, the ultra-fine grained layers of technical purity are consumed by the layer overlapping growth of high-purity grains producing a banded grain structure. For 9 ARB cycles and at an annealing temperature of 400 °C, a globular grain structure develops with grain sizes larger than twice the layer thickness. The effect of impurities on recrystallization and grain growth of ARB laminates is discussed with regard to tailoring its microstructure by heat treatment. For further analyses, the results are compared with Potts model simulations finding a rather good qualitative agreement with the experimental data albeit some simplified model assumptions.

Figure 0

FIG. 1. EBSD orientation map of ARB aluminum laminate sheets in the as-processed state (left column) and annealed for 1 h at 300 °C (center column) and 400 °C (right column). The number of ARB cycles and the ideal layer thickness for each row is given on the left. The thick black lines mark the central interface of the aluminum sheets. RD is horizontal, ND vertical. The color code is given in Table I. For the as-processed sheets at 2 and 4 ARB cycles, only the technically pure layers are shown because the high-purity layer at the magnification chosen would only be represented by part of a single grain.

Figure 1

TABLE I. Color coding of selected ideal orientations with corresponding Euler angles.

Figure 2

FIG. 2. BSE image of the sheet after 8 ARB cycles and 200 °C annealing. The high-purity aluminum is recrystallized, only a few nonrecrystallized areas remain (cyan arrows). RD is horizontal, ND vertical.

Figure 3

FIG. 3. (a) EBSD orientation map of the ARB aluminum sheet after 4 ARB cycles annealed for 1 h at 400 °C. The color code is given in Table I. High-angle grain boundaries (>15° misorientation) are in red, low-angle grain boundaries (<15° misorientation) are in blue. The black lines mark the interfaces between 5 and 2N+ layers. The age of the interface is given with white number. The parameter s describes the position with respect to the top edge of the sheet with s = 0, 0.5, and 1 referring to the top, middle, and bottom of the sheet, respectively. (b) The EBSD band contrast map of the same area. The green arrows mark interfaces with ages of 3 and 4.

Figure 4

FIG. 4. The percentage of interface area between the 5N and 2N+ layers of the sheet after 4 ARB cycles annealed for 1 h at 400 °C, where the boundary of the 5N layer migrated into the 2N+ layer as a function of the age of the ARB interface.

Figure 5

FIG. 5. BSE images of the sheet after 8 ARB cycles (a) before annealing and (b) after annealing at 400 °C.

Figure 6

FIG. 6. Average grain size in RD and ND of the high-purity layers in the ARB as-processed state (a) and after annealing for one h at 300 °C (b) and 400 °C (c) in comparison with the ideal layer thickness for each ARB cycle. After 6 and more ARB cycles in the annealed state, no distinction is made between high purity and technical pure layers. The grain aspect ratio is given in (d).

Figure 7

FIG. 7. Grain microstructure of the simulated ARB aluminum sheet after 4 ARB cycles. (a) Initial structure (t = 0), (b) evolved structure after 4000 annealing time steps, and (c) evolved structure after 8000 time steps. The dashed lines mark the original interfaces between 5N and 2N+ layers. The variable t refers to the simulation time, but the unit is arbitrary.