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Simple method for characterizing linear multi-port microstrip structures

Published online by Cambridge University Press:  19 April 2011

Julio A. Lonac
Affiliation:
MEC srl – Viale Pepoli, 3/2 40123 Bologna, BO, Italy.
Ilan Melczarsky
Affiliation:
DEIS, University of Bologna – Viale Risorgimento, 2 40136 Bologna, BO, Italy.
Rudi P. Paganelli*
Affiliation:
CNR-IEIIT – Viale Risorgimento, 2 40136 Bologna, BO, Italy. Phone:  + 39 051 2093845.
*
Corresponding author: R. P. Paganelli Email: rudipaolo.paganelli@cnr.it
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Abstract

A simple method for the full characterization of passive n-port microwave monolithic integrated circuit (MMIC) structures using standard two-port vector network analyzer (VNA) measurements is presented. Its main advantages are: it does not require to perform measurements from all the ports of the network, no special calibration procedure is needed, the auxiliary terminations required by the procedure can be integrated at the border of the structure under test with minimal area increase, and it can be easily implemented in commercial CAD software. The method was applied to a nine-port microstrip structure corresponding to the output power combiner and impedance matching network of an X-band MMIC high power amplifier (HPA). The full S-parameter matrix was derived from two-port measurements and compared to the circuit–as well as electromagnetic (EM)-based simulations of the structure.

Information

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011
Figure 0

Fig. 1. Measurement sequence for the identification of non-measurable port combinations.

Figure 1

Fig. 2. Matrix for the calculation of the number of required measurements.

Figure 2

Fig. 3. Measurements required for the identification of non-measurable ports.

Figure 3

Fig. 4. Nine-port output power combiner and matching network of an X-band MMIC HPA used for the validation of the method.

Figure 4

Fig. 5. Measurement matrix (P1 and P2 (VNA ports), O open circuit, Z = ZTerm).

Figure 5

Fig. 6. Scheme of the independent elements of the reciprocal and symmetrical Z matrix identified by each measurement of Fig. 5.

Figure 6

Fig. 7. S11 and S12 of the network: method (symbols), EM simulation (thick line), circuit-based model (thin line).

Figure 7

Fig. 8. Real part of the independent S parameters of the network obtained with the proposed method (symbols) and EM simulation (thick line).

Figure 8

Fig. 9. Imaginary part of the independent S parameters of the network obtained with the proposed method (symbols) and EM simulation (thick line).

Figure 9

Fig. 10. Common mode impedance of the combiner: method (symbols), EM simulation (thick line), circuit-based model (thin line).

Figure 10

Fig. 11. Combiner attenuation for common mode excitation at ports 1–8: method (symbols), EM simulation (thick line), circuit-based model (thin line).

Figure 11

Fig. 12. Error metric between the S matrix obtained with EM simulation and the one obtained with the method ($\overline M ^{\hat S - S^{EM} } $), and between the EM matrix and the circuit simulation ($\overline M ^{S^{ckt} - S^{EM} }$).

Figure 12

Fig. 13. Error between some 2 × 2 sub-matrices of the S matrix of the network measured directly and the corresponding matrices obtained with EM simulations.