This work presents the design, implementation, and theoretical analysis of a wideband, high-sensitivity power detector, together with a compact, broadside-coupled directional coupler. The novel nonuniform distributed detector topology was implemented in a
$130\,\mathrm{nm}$ silicon-germanium bipolar complementary metal-oxide-semiconductor technology, enabling monolithic integration of the proposed detector in satellite communication millimeter-wave front-end components. The detector achieves a higher voltage sensitivity in comparison to previously reported distributed detectors, from
$45.12\,\mathrm{kV\,W^{-1}}$ at
$2.5\,\mathrm{GHz}$ to
$10.51\,\mathrm{kV\,W^{-1}}$ at
$110\,\mathrm{GHz}$, a wideband input matching below
$-10\,\mathrm{dB}$ from
$2.5$ to
$92.5\,\mathrm{GHz}$, and the second-highest relative bandwidth, at
$190\,\mathrm{\%}$ compared to other integrated distributed power detectors. The detector core draws
$7.79\,\mathrm{mW}$ of DC power with the integrated output buffer, and
$1.78\,\mathrm{mW}$ without it. To the best of our knowledge, this is the first reported nonuniform distributed detector and the first distributed detector reported in a silicon-germanium heterojunction bipolar transistor technology.