High-power rectification at X-band remains challenging because the diode must simultaneously offer a sufficiently high cutoff frequency and sustain large RF voltages. This work presents a 5.6-W, 10-GHz high-efficiency practical Class-F harmonic-terminated rectifier developed through device–circuit co-design. A custom finger-type GaN Schottky diode is fabricated, achieving a low zero-bias capacitance of $0.19\,\text{pF}$, a breakdown voltage of $205\,\text{V}$, a turn-on voltage of $1.24\,\text{V}$, and a series resistance of $11\,\Omega$, corresponding to a cutoff frequency of $76\,\text{GHz}$. These characteristics enable fast switching and low parasitic losses suitable for high-power microwave rectification, and device reliability is confirmed through stable operation at $350\,\text{K}$ and a 24-h stress test. Leveraging this diode, the rectifier is optimized with a harmonic-termination network to realize the intended Class-F boundary conditions through controlled second- and third-harmonic impedances. Measurements show a peak RF-to-DC efficiency of $62.1\%$ at an input power of $37.5\,\text{dBm}$ with a $470\,\Omega$ load. Rather than pursuing a single absolute performance metric, the core contribution lies in demonstrating a device–circuit co-design methodology. By integrating targeted device optimization with harmonic-termination circuit design, this approach addresses combined challenges of frequency and power scaling in high-power X-band microwave rectification.

This paper presents a compact, ultra-wideband, and high-efficiency rectifier designed for microwave power transmission and energy harvesting applications. The proposed architecture integrates a series-coupled matching network with cascading band-stop structures, enabling both impedance transformation and harmonic control within a compact footprint. Two highly compact rectifiers are designed, fabricated, and measured to verify the proposed method. A broadband rectifier, operating between 1.8 and 3.0 GHz with a relative bandwidth of 50%, achieves above 70% rectification efficiency and a peak efficiency of 79%. The other wideband operation mechanism is analytically investigated: the band-stop network reshapes the diode’s impedance profile by tuning its low- and high-frequency components into a conjugate relationship, while the coupled matching structure transforms the resulting impedance to match the system impedance, thereby realizing ultra-wideband matching. The fabricated rectifier achieves a measured efficiency exceeding 40% across a wide frequency range of 1.1–3.9 GHz, corresponding to a 112% relative bandwidth at a low input power level of 0 dBm. In addition to its wideband and efficient performance, the rectifier features a highly compact form factor of only 18 × 24.8 mm2.

This paper presents a rectenna with a pentagonal-shaped circularly polarized (CP) antenna and a rectifier for radio frequency (RF) energy harvesting in the industrial, scientific and medical (ISM) (2.4 GHz) band. The antenna gain is increased by incorporating a frequency selective surface (FSS) over the patch of the antenna. A rectifier with a series topology and a T-matching network is used to translate RF energy received via the CP antenna to direct current power. The rectifier employs a Schottky diode (HSMS-2860) for rectification, achieving a peak conversion efficiency of 56.5% and delivering an output voltage of 238 mV at an input power of −10 dBm across a 1 kΩ load. Also, a unique 3D pentagonal array structure is presented, which consists of five FSS-based antenna elements, each with a 72° coverage angle. The 3D pentagonal antenna array allows for 360° collection of ambient signals, with the CP antenna sensing RF signals in the full azimuth plane, making it suitable for efficient RF energy harvesting.

This paper presents the design, optimization, fabrication, and measurement of three RF-to-DC rectifiers operating at 3.5 GHz for wireless power transfer and RF energy harvesting applications. A low-power rectifier achieves a peak efficiency of 50.5% at -2 dBm, while a high-power rectifier reaches 61.2% at 15 dBm. To extend the operating range, a wide-range rectifier based on a passive dynamic sub-rectifier selection architecture is proposed. The developed system achieves a maximum efficiency of 54.7% at 16 dBm and maintains over 20% efficiency across a 41 dB input power range. Experimental results validate the proposed designs and show good agreement with simulations.

This paper presents a broadband rectifier based on GaN high electron mobility transistor (HEMT). The continuous class-B/J rectifier operation mode is analyzed in detail. The relationship between the continuous mode class-B/J rectification efficiency and the output capacitance Cout and the on-state resistance Ron is built and the rectification model is firstly presented. Then, the available impedance design space can be determined based on the rectification efficiency model. Considering the package parameters of the CGH40010F, design space at the package plane has been presented. Moreover, a broadband phase tuning network (PTN) is adjusted to satisfy this impedance space. Thus, a broadband transistor-based rectifier can be designed using the continuous class-B/J mode and the PTN. For validation, a rectifier working in 2.4–3.3 GHz was fabricated using CGH40010F. The rectification efficiency varies from 66% to 78% when RF input power is 10 W. Compared with other transistor-based rectifiers, the presented rectifier has a competitive working bandwidth.

This paper presents a compact broad dual-band rectifier based on a transmission line matching network. This method improves the overall impedance matching performance over two bands, and improves bandwidth of the rectifier’s efficiency. A π-type direct current filter with excellent harmonic suppression performance is proposed. The multi-section transmission line used as the dual-band input impedance matching network is analyzed to achieve an arbitrary frequency ratio. A rectifier is designed and implemented using a three-stage transmission-line matching network. Simulation and experimental results show that a dual-band rectifier is successfully performed with the measured power conversion efficiency (PCE) of 75.7% and 76.3% at 0.915 and 2.45 GHz, respectively. Additionally, the rectifier exhibits bandwidths of 0.48 and 0.25 GHz when the PCE exceeds 70%. Significant enhancement of bandwidth over conventional rectifiers is demonstrated.

This paper presents a compact and ultra-wideband high-efficiency microwave rectifier for wireless power transmission (WPT) applications. The input-matching-network utilizes a compact asymmetric coupled transmission line structure, contributing to wideband performance. The rectifier adopts a voltage-doubler topology, resulting in a smooth input impedance across a wide bandwidth. The working principle of the asymmetric coupled transmission line matching network is analyzed. Simulation and measurement are conducted on the proposed rectifier. The fabricated prototype demonstrates a wide bandwidth of 162.5% (0.3–2.9 GHz with the power conversion efficiency (PCE) exceeding 60% at an input power of 18 dBm. Even at an input power of 10 dBm, the measured PCE remains above 50% over the working band. The proposed ultra-wideband rectifier shows promising potential for WPT applications including wireless powering of low-power electronic devices and sensors.

The microwave energy-harvesting (MEH) and microwave power transfer (MPT) technologies have become the most emerging areas of research nowadays. The microwave rectifier circuit is the bottleneck of both the MEH and MPT systems. The efficiency of the system depends on the power conversion efficiency (PCE) of the rectifier. Due to the recent advancement of the fifth-generation communication system, it is desirable to propose an efficient rectifier operating at sub-6 GHz 5G bands. A dual-band rectifier circuit is designed and demonstrated for MEH/MPT purposes, specifically at sub-6 GHz 5G frequency bands. The dual-band matching is achieved by using a stepped impedance transmission line. The rectifier covers N78 (3.3–3.6 GHz) and N79 (4.8–5.0 GHz) bands. Peak PCE of 67.6% @ 3.5 GHz and 56.8% @ 4.9 GHz are achieved. For validation purpose, the rectifier is fabricated and characterized and measured results show good agreement with simulated results.

We show how the modular representation theory of inner forms of general linear groups over a non-Archimedean local field can be brought to bear on the complex theory in a remarkable way. Let $\text{F}$ be a non-Archimedean locally compact field of residue characteristic $p$, and let $\text{G}$ be an inner form of the general linear group $\text{GL}_{n}(\text{F})$ for $n\geqslant 1$. We consider the problem of describing explicitly the local Jacquet–Langlands correspondence $\unicode[STIX]{x1D70B}\mapsto _{\text{JL}}\unicode[STIX]{x1D70B}$ between the complex discrete series representations of $\text{G}$ and $\text{GL}_{n}(\text{F})$, in terms of type theory. We show that the congruence properties of the local Jacquet–Langlands correspondence exhibited by A. Mínguez and the first author give information about the explicit description of this correspondence. We prove that the problem of the invariance of the endo-class by the Jacquet–Langlands correspondence can be reduced to the case where the representations $\unicode[STIX]{x1D70B}$ and $_{\text{JL}}\unicode[STIX]{x1D70B}$ are both cuspidal with torsion number $1$. We also give an explicit description of the Jacquet–Langlands correspondence for all essentially tame discrete series representations of $\text{G}$, up to an unramified twist, in terms of admissible pairs, generalizing previous results by Bushnell and Henniart. In positive depth, our results are the first beyond the case where $\unicode[STIX]{x1D70B}$ and $_{\text{JL}}\unicode[STIX]{x1D70B}$ are both cuspidal.

Microwave power transfer (MPT) can solve certain types of problems. For example, Internet of Things requires a flexible configuration of sensor networks, which is hindered by wired-charging sensors. This problem can be overcome by MPT techniques. However, the transmission efficiency of MPT is lower than that of wired transmission. This study focuses on the operation of rectifiers having a pulse-modulated input signal. Although a pulse-modulated wave is effective for improving the RF-DC conversion efficiency, the output voltage waves of rectifiers have a high ripple content. Moreover, the harmonic balance method cannot be used to simulate the operation of a pulse-modulated rectifier. To reduce the ripple content, a smoothing capacitor should be connected in parallel to an output load. We investigated the influence of a smoothing capacitor, the general characteristics of rectifiers under pulse-modulated waves, and the effectiveness of using pulse-modulated waves for improving RF-DC conversion efficiency. In conclusion, we reveal a necessary condition of the smoothing capacitor for improvement, demonstrate the effectiveness of pulse modulation, and show that the optimum impedance with a pulse-modulated wave input is an inverse of duty ratio times as compared to that with continuous wave input.

Voltage doubler rectifiers are usually applied to systems with high voltage and low current requirement. An X band voltage doubler rectifier has been developed with 72% conversion efficiency. To the best of our knowledge, the obtained rectifying efficiency is the maximum reported to date at X band with Schottky diodes. The working characteristics of the diodes in the voltage doubler rectifier are analyzed in detail. Closed-form equations of diode input impedance and rectifying efficiency are presented and validated using Advanced Design System simulations. The matching network design of the proposed rectifier is based on the closed-form equations. The preliminary rectifying efficiency is predicted by the closed-form equations as well. Measured and simulated results are in good agreement.

The paper presents a simplified analysis of harmonically terminated rectifier circuit and experimental results of a Schottky diode rectifier with even and odd harmonic terminations. The analysis is based on the Fourier series expansion of the voltage and current across the diode circuit. Harmonic terminations similar to the techniques used for power amplifiers are studied. A maximum efficiency of 84% at 30 dBm is obtained with second- and third-order harmonics terminated. The optimum value of dc load to maximize efficiency is obtained by sweeping the load. An optimal operating range of 28–35 dBm is obtained. The applications of the rectifier in wireless charging and power transfer systems are discussed.

In this work, a high-efficiency radio-frequency energy-harvesting system that takes use of the Portuguese Digital Television signal (750–758 MHz) to obtain DC power is proposed. To be useful, it is optimized to operate at low-power conditions. For the rectifier, three different solutions are presented: a single-series diode, a single-shunt diode, and a voltage-doubler configuration. The efficiency is similar for the three rectifiers – about 54% with a sine-wave excitation and −10.5 dBm of input power. Field measurements with the voltage-doubler have shown 63% efficiency for the same input power.

This paper proposes a combined harvesting system to improve the efficiency and flexibility of autonomous wireless network nodes, supplied by means of wireless power transfer technique. In particular, a mixed system for electromagnetic (EM) and thermal energy harvesting (EH), conceived for passive nodes of wireless sensor networks and radio frequency (RF) identification tags, is described. The proposed system aims at increasing the effectiveness and the efficiency of the EH system by integrating an antenna and a rectifier with a thermo-electric generator (TEG) able to perform thermal EH. The energy provided by the thermal harvester is exploited twice: to increase the rectifier efficiency by providing a voltage usable to improve the bias condition of the rectifying diode, and to provide additional dc energy, harvested for free. Ultimately, a great efficiency improvement, especially at low incident RF power, has been observed. The design methodology and the EM performance of a quarter-wavelength patch antenna, integrated with the TEG are resumed. Then, a test campaign to evaluate the thermal EH performance has been carried out. Afterward, a rectifier with variable bias voltage, operating at the same frequency of the antenna, has been opportunely designed to exploit the harvested thermal energy to bias the diode. A measurement campaign has been then carried out to test the efficiency increment obtained and to validate the proposed solution.

In this paper, a 1.8–2.6 GHz wideband rectenna is designed for radio frequency (RF) energy harvesting in the context of wireless sensor nodes (WSN). To assess the feasibility of ambient RF energy harvesting, the power density from RF base stations is analyzed through statistical measurements. Power density measurements are also performed close to Wi-Fi routers. Using these results, a methodology based on impedance matching network adaptation and maximum power transfer is proposed to design the wideband RF harvester. Using this method, three RF bands, i.e. GSM1800, UMTS and WLAN, are covered. The theoretical analysis is confirmed by simulations and measurements. From measurements results, the prototype RF-to-DC conversion efficiency is 15% at −20 dBm from 1.8 to 2.6 GHz. It is shown that with three RF sources in the chosen bands, each emitting at 10 dBm, the RF-to-DC conversion efficiency is 15% better compared to that measured with a single RF source. Finally, 7 µW is harvested at 50 m from a GSM1800 and UMTS base station. This value confirms the RF harvester workability to supply small sensors.